瀏覽 的方式: 作者 KAI, F
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| 公開日期 | 標題 | 作者 |
| 1-十二月-1988 | THE DOPED QUANTUM WELL GATE FET FABRICATED BY LOW-PRESSURE MOCVD | LIN, W; LEI, MD; CHANG, CY; HSU, WC; DI, LB; KAI, F; 電控工程研究所; Institute of Electrical and Control Engineering |
| 1-七月-1989 | ORIGIN OF THE ENHANCEMENT OF NEGATIVE DIFFERENTIAL RESISTANCE AT LOW-TEMPERATURES IN DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES | WU, JS; CHANG, CY; LEE, CP; WANG, YH; KAI, F; 電控工程研究所; Institute of Electrical and Control Engineering |