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Showing results 1 to 1 of 1
Issue Date
Title
Author(s)
1-May-1994
NEW POLYSILICON-OXIDE-NITRIDE-OXIDE-SILICON ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY DEVICE APPROACH FOR ELIMINATING OFF-CELL LEAKAGE CURRENT
LIN, JK
;
CHANG, CY
;
HUANG, HS
;
CHEN, KL
;
KUO, DC
;
電控工程研究所
;
Institute of Electrical and Control Engineering
