National Chiao Tung University Institutional Repository：瀏覽交通大學機構典藏

瀏覽的方式：作者 Kakushima, K.

顯示 1 到 9 筆資料，總共 9 筆

公開日期	標題	作者
1-一月-2011	Annealing Effect on the Electrical Properties of La2O3/InGaAs MOS Capacitors	Kanda, T.; Zade, D.; Lin, Y. -C.; Kakushima, K.; Ahmet, P.; Tsutsui, K.; Nishiyama, A.; Sugii, N.; Chang, E. Y.; Natori, K.; Hattori, T.; Iwai, H.; 交大名義發表; National Chiao Tung University
2010	Effect of Thermal Treatments on HfO2/In0.7Ga0.3As Metal-Oxide-Semiconductor Capacitor Characteristics	Chang, Chia-Hua; Shie, Tin-En; Lin, Yueh-Chin; Kakushima, K.; Iwai, H.; Lu, Po-Ching; Lin, Ting-Chun; Huang, Guan Ning; Chang, Edward Yi; 交大名義發表; National Chiao Tung University
2009	Electrical Characteristics of HfO2 and La2O3 Gate Dielectrics for In0.53Ga0.47As MOS Structure	Funamiz, K.; Lin, Y. C.; Kakushima, K.; Ahmet, P.; Tsutsui, K.; Sugii, N.; Chang, E. Y.; Hattori, T.; Iwai, H.; 交大名義發表; National Chiao Tung University
1-Jun-2011	Electrical Characterization of Al(2)O(3)/n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface Treatments	Trinh, H. D.; Brammertz, G.; Chang, E. Y.; Kuo, C. I.; Lu, C. Y.; Lin, Y. C.; Nguyen, H. Q.; Wong, Y. Y.; Tran, B. T.; Kakushima, K.; Iwai, H.; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-Jun-2011	Electrical Characterization of Al2O3/n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface Treatments	Trinh, H. D.; Brammertz, G.; Chang, E. Y.; Kuo, C. I.; Lu, C. Y.; Lin, Y. C.; Nguyen, H. Q.; Wong, Y. Y.; Tran, B. T.; Kakushima, K.; Iwai, H.; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
2016	Enhancement-Mode GaN MIS-HEMTs with HfLaOx Gate Insulator	Lin, Y. C.; Lin, J. C.; Lin, Y.; Wu, C. H.; Huang, Y. X.; Liu, S. C.; Hsu, H. T.; Hsieh, T. E.; Kakushima, K.; Iwai, H.; Chang, E. Y.; 材料科學與工程學系; 國際半導體學院; Department of Materials Science and Engineering; International College of Semiconductor Technology
1-Jul-2011	Improving electrical characteristics of W/HfO(2)/In(0.53)Ga(0.47)As gate stacks by altering deposition techniques	Zade, D.; Kakushima, K.; Kanda, T.; Lin, Y. C.; Ahmet, P.; Tsutsui, K.; Nishiyama, A.; Sugii, N.; Chang, E. Y.; Natori, K.; Hattori, T.; Iwai, H.; 材料科學與工程學系; Department of Materials Science and Engineering
1-Jul-2011	Improving electrical characteristics of W/HfO2/In0.53Ga0.47As gate stacks by altering deposition techniques	Zade, D.; Kakushima, K.; Kanda, T.; Lin, Y. C.; Ahmet, P.; Tsutsui, K.; Nishiyama, A.; Sugii, N.; Chang, E. Y.; Natori, K.; Hattori, T.; Iwai, H.; 材料科學與工程學系; Department of Materials Science and Engineering
2016	Optimization of gate insulator material for GaN MIS-HEMT	Lin, Y. C.; Lin, T. W.; Wu, C. H.; Yao, J. N.; Hsu, H. T.; Shih, W. C.; Kakushima, K.; Tsutsui, K.; Iwai, H.; Chang, E. Y.; 材料科學與工程學系; 光電系統研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology

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