瀏覽 的方式： 作者 Kanda, T.
顯示 1 到 3 筆資料，總共 3 筆
| 公開日期 | 標題 | 作者 |
| 1-一月-2011 | Annealing Effect on the Electrical Properties of La2O3/InGaAs MOS Capacitors | Kanda, T.; Zade, D.; Lin, Y. -C.; Kakushima, K.; Ahmet, P.; Tsutsui, K.; Nishiyama, A.; Sugii, N.; Chang, E. Y.; Natori, K.; Hattori, T.; Iwai, H.; 交大名義發表; National Chiao Tung University |
| 1-七月-2011 | Improving electrical characteristics of W/HfO(2)/In(0.53)Ga(0.47)As gate stacks by altering deposition techniques | Zade, D.; Kakushima, K.; Kanda, T.; Lin, Y. C.; Ahmet, P.; Tsutsui, K.; Nishiyama, A.; Sugii, N.; Chang, E. Y.; Natori, K.; Hattori, T.; Iwai, H.; 材料科學與工程學系; Department of Materials Science and Engineering |
| 1-七月-2011 | Improving electrical characteristics of W/HfO2/In0.53Ga0.47As gate stacks by altering deposition techniques | Zade, D.; Kakushima, K.; Kanda, T.; Lin, Y. C.; Ahmet, P.; Tsutsui, K.; Nishiyama, A.; Sugii, N.; Chang, E. Y.; Natori, K.; Hattori, T.; Iwai, H.; 材料科學與工程學系; Department of Materials Science and Engineering |
