瀏覽 的方式： 作者 Kumar, D.
顯示 1 到 4 筆資料，總共 4 筆
| 公開日期 | 標題 | 作者 |
| 25-一月-2019 | Characteristics of flexible and transparent Eu2O3 resistive switching memory at high bending condition | Aluguri, R.; Sailesh, R.; Kumar, D.; Tseng, Tseung-Yuen; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics |
| 1-一月-2017 | High Performance Resistive Switching Characteristics of SiN Films with a Cu/Ta/SiN/Cu/SiN/TiN Multilayer Structure | Kumar, D.; Tseng, T. Y.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-一月-2017 | Metal oxide resistive switching memory: Materials, properties and switching mechanisms | Kumar, D.; Aluguri, R.; Chand, U.; Tseng, T. Y.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-九月-2017 | One bipolar transistor selector - One resistive random access memory device for cross bar memory array | Aluguri, R.; Kumar, D.; Simanjuntak, F. M.; Tseng, T. Y.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
