瀏覽 的方式： 作者 LIN, JK
顯示 1 到 8 筆資料，總共 8 筆
| 公開日期 | 標題 | 作者 |
| 1-二月-1994 | ANALYSIS OF BILATERAL LATCH-UP TRIGGERING IN VLSI CIRCUITS | HUANG, HS; CHANG, CY; HSU, CC; CHEN, KL; LIN, JK; 電控工程研究所; Institute of Electrical and Control Engineering |
| 1-十一月-1993 | THE BEHAVIOR OF BILATERAL LATCH-UP TRIGGERING IN VLSI ELECTROSTATIC DISCHARGE DAMAGE PROTECTION CIRCUITS | HUANG, HS; CHANG, CY; HSU, CC; CHEN, KL; LIN, JK; 電控工程研究所; Institute of Electrical and Control Engineering |
| 1-九月-1993 | CHARGE LOSS DUE TO AC PROGRAM DISTURBANCE STRESSES IN EPROMS | LIN, JK; CHANG, CY; WANG, TH; HUANG, HS; CHEN, KL; HO, TS; KO, J; 電控工程研究所; Institute of Electrical and Control Engineering |
| 1994 | A NEW LOCAL TRAINING RULE FOR HIGHER-ORDER ASSOCIATIVE MEMORIES | CHANG, JY; LIU, WH; LIN, JK; 電控工程研究所; Institute of Electrical and Control Engineering |
| 1-五月-1994 | NEW POLYSILICON-OXIDE-NITRIDE-OXIDE-SILICON ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY DEVICE APPROACH FOR ELIMINATING OFF-CELL LEAKAGE CURRENT | LIN, JK; CHANG, CY; HUANG, HS; CHEN, KL; KUO, DC; 電控工程研究所; Institute of Electrical and Control Engineering |
| 1993 | THE PERCEPTRON TRAINING RULE FOR BIDIRECTIONAL ASSOCIATIVE MEMORY | LIN, JK; CHANG, JY; 電控工程研究所; Institute of Electrical and Control Engineering |
| 1-一月-1994 | A STUDY ON BILATERAL LATCH-UP SELF-TRIGGERING IN COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR PROTECTION CIRCUITS | HUANG, HS; CHANG, CY; CHEN, KL; LIU, IO; HSU, CC; LIN, JK; 電控工程研究所; Institute of Electrical and Control Engineering |
| 1-六月-1993 | TRANSIENT AND STEADY-STATE CARRIER TRANSPORT UNDER HIGH-FIELD STRESSES IN SONOS EEPROM DEVICE | LIN, JK; CHANG, CY; HUANG, HS; HO, TS; CHEN, KL; 電控工程研究所; Institute of Electrical and Control Engineering |
