| 公開日期 | 標題 | 作者 |
| 15-五月-1994 | ANOMALOUS MOBILITY ENHANCEMENT IN HEAVILY CARBON-DOPED GAAS | CHEN, HD; FENG, MS; LIN, KC; CHEN, PA; WU, CC; WU, JW; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering |
| 1-七月-1995 | BACK-GATING EFFECTS ON THE GA0.1IN0.8P/INP/INGAAS HIGH-ELECTRON-MOBILITY TRANSISTOR | LIN, KC; CHANG, CY; WU, CC; CHEN, HD; CHEN, PA; CHAN, SH; WU, JW; CHANG, EY; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering |
| 1-六月-1993 | CARBON INCORPORATION DURING GROWTH OF GAAS BY TEGA-ASH3 BASE LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION | CHEN, HD; CHANG, CY; LIN, KC; CHAN, SH; FENG, MS; CHEN, PA; WU, CC; JUANG, FY; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering |
| 15-六月-1994 | CATION SOURCE DEPENDENCE OF GA0.5IN0.5P GROWTH-RATE BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION | WU, JW; CHANG, CY; LIN, KC; CHAN, SH; CHEN, HD; CHEN, PA; CHANG, EY; KUO, MS; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering |
| 20-六月-1993 | DOPING OF INGAP EPITAXIAL LAYERS GROWN BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION | WU, CC; LIN, KC; CHAN, SH; FENG, MS; CHANG, CY; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering |
| 1-七月-1993 | IN0.49GA0.51P/GAAS HETEROSTRUCTURES GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION | FENG, MS; LIN, KC; WU, CC; CHEN, HD; SHANG, YC; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering |
| 15-二月-1994 | LOW-TEMPERATURE LUMINESCENT PROPERTIES OF DEGENERATE P-TYPE GAAS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION | CHEN, HD; FENG, MS; CHEN, PA; LIN, KC; WU, CC; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering |
| 5-九月-1994 | MAGNESIUM DOPING OF INGAALP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION | WU, CC; CHANG, CY; CHEN, PA; CHEN, HD; LIN, KC; CHAN, SH; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering |
| 1-十二月-1994 | PASSIVATION OF GAAS POWER FIELD-EFFECT TRANSISTOR USING ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION SILICON-NITRIDE TECHNIQUE | CHANG, EY; LIN, KC; WU, JW; CHEN, TH; CHEN, JS; WANG, SP; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering |
| 1-四月-1994 | PHOTOLUMINESCENCE OF HEAVILY P-TYPE-DOPED GAAS - TEMPERATURE AND CONCENTRATION DEPENDENCES | CHEN, HD; FENG, MS; CHEN, PA; LIN, KC; WU, JW; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering |
| 1-十二月-1993 | A PSEUDOMORPHIC GAINP/INP MESFET WITH IMPROVED DEVICE PERFORMANCE | LIN, KC; HSIN, YM; CHANG, CY; CHANG, EY; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering |
| 1994 | REACTIVE ION ETCH OF GAAS AND ALGAAS USING BCL3, SICL4 AND SF6, INSTEAD OF CCL2F2 | WU, JW; CHANG, CY; LIN, KC; CHANG, EY; HWANG, JH; 電控工程研究所; Institute of Electrical and Control Engineering |
| 1-四月-1995 | REACTIVE ION ETCHING OF GAINP, GAAS, AND ALGAAS | WU, JW; CHANG, CY; CHANG, EY; CHANG, SH; LIN, KC; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering |
| 1994 | THE RELIABILITY OF MULTILEVEL METALLIZATION ON INGAAS/GAAS LAYERS | CHANG, EY; CHEN, JS; WU, JW; LIN, KC; 材料科學與工程學系; Department of Materials Science and Engineering |
| 1994 | THE SELECTIVITY OF REACTIVE ION ETCH OF GA0.51IN0.49P/GAAS | WU, JW; CHAN, SH; LIN, KC; CHANG, CY; CHANG, EY; 電控工程研究所; Institute of Electrical and Control Engineering |
| 1-三月-1993 | SEMIINSULATING IRON-DOPED INDIUM-PHOSPHIDE GROWN BY LOW-PRESSURE METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION | WU, CC; FENG, MS; LIN, KC; CHAN, SH; CHANG, CY; 交大名義發表; National Chiao Tung University |
| 1-十一月-1993 | STUDY OF SCHOTTKY CONTACTS ON N-GA0.51IN0.49P BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION | CHANG, EY; LAI, YL; LIN, KC; CHANG, CY; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering |
| 1-八月-1994 | SUBMICRON T-SHAPED GATE HEMT FABRICATION USING DEEP-UV LITHOGRAPHY | CHANG, EY; LIN, KC; LIU, EH; CHANG, CY; CHEN, TH; CHEN, J; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering |
| 1-二月-1995 | THE THERMAL-STABILITY OF OHMIC CONTACT TO N-TYPE INGAAS LAYER | WU, JW; CHANG, CY; LIN, KC; CHANG, EY; CHEN, JS; LEE, CT; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering |
| 1-八月-1994 | TIWN SCHOTTKY CONTACTS TO N-GA(0.51)IN(0.49)P | LIN, KC; CHANG, EY; WANG, SP; LAI, YL; CHANG, CY; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering |
