| 公開日期 | 標題 | 作者 |
| 1-十月-1990 | BEHAVIOR OF THE 1ST LAYER GROWTH IN GAAS MOLECULAR-BEAM EPITAXY | LIU, DG; LEE, CP; CHANG, KH; WU, JS; LIOU, DC; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering |
| 1-二月-1991 | CHARACTERIZATION OF IMPROVED ALGAAS/GAAS RESONANT TUNNELING HETEROSTRUCTURE BIPOLAR-TRANSISTORS | WU, JS; CHANG, CY; LEE, CP; CHANG, KH; LIU, DG; LIOU, DC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 29-十月-1990 | DELTA-DOPED QUANTUM-WELL STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY | LIU, DG; LEE, CP; CHANG, KH; WU, JS; LIOU, DC; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering |
| 25-五月-1992 | DIRECT OBSERVATION OF SI DELTA-DOPED GAAS BY TRANSMISSION ELECTRON-MICROSCOPY | LIU, DG; FAN, JC; LEE, CP; TSAI, CM; CHANG, KH; LIOU, DC; LEE, TL; CHEN, LJ; 電控工程研究所; Institute of Electrical and Control Engineering |
| 1-五月-1993 | FUNDAMENTAL MODE-OPERATION OF HIGH-POWER INGAAS/GAAS/ALGAAS LASER ARRAYS | TSANG, JS; LIOU, DC; TSAI, KL; CHEN, HR; TSAI, CM; LEE, CP; JUANG, FY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-三月-1992 | HIGH-QUALITY ALGAAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES | CHANG, KH; WU, JS; LIU, DG; LIOU, DC; LEE, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 15-一月-1991 | IMPROVED ALGAAS/GAAS DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES USING 2-DIMENSIONAL SOURCE ELECTRONS | WU, JS; LEE, CP; CHANG, CY; CHANG, KH; LIU, DG; LIOU, DC; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering |
| 15-十月-1990 | INFLUENCE OF INDIUM DOPING ON ALGAAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY | CHANG, KH; LEE, CP; WU, JS; LIU, DG; LIOU, DC; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering |
| 1-五月-1992 | INTRINSIC AND EXTRINSIC EFFECTS ON PERFORMANCE LIMITATION OF ALGAAS/GAAS DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES | WU, JS; LEE, CP; CHANG, CY; CHANG, KH; LIU, DG; LIOU, DC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 28-二月-1991 | INVESTIGATION OF INDIUM DOPING AND INCORPORATION IN ALGAAS/GAAS DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES | WU, JS; CHANG, KH; LEE, CP; CHANG, CY; LIU, DG; LIOU, DC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-二月-1992 | A NOVEL TECHNIQUE FOR LOW-THRESHOLD AND HIGH-POWER INGAAS/GAAS STRAINED-LAYER 0.98-MU-M BURIED HETEROSTRUCTURE LASER FABRICATION | LIOU, DC; CHIANG, WH; LEE, CP; CHANG, KH; LIU, DG; WU, JS; TU, YK; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering |
| 1-十一月-1991 | PRECISE DETERMINATION OF ALUMINUM CONTENT IN ALGAAS | CHANG, KH; LEE, CP; WU, JS; LIU, DG; LIOU, DC; WANG, MH; CHEN, LJ; MARAIS, MA; 電控工程研究所; Institute of Electrical and Control Engineering |
| 1-七月-1991 | QUANTUM EFFECT IN THE ACCUMULATION LAYER ON FIELD-INDUCED PHOTOLUMINESCENCE OF DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES | WU, JS; CHANG, KH; LEE, CP; CHANG, CY; LIU, DG; LIOU, DC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-五月-1990 | REPETITION OF NEGATIVE DIFFERENTIAL RESISTANCE IN VERTICALLY INTEGRATED DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES | WU, JS; LEE, CP; CHANG, CY; CHANG, KH; LIU, DG; LIOU, DC; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering |
| 26-十一月-1990 | RESONANT TUNNELING OF ELECTRONS FROM QUANTIZED LEVELS IN THE ACCUMULATION LAYER OF DOUBLE-BARRIER HETEROSTRUCTURES | WU, JS; CHANG, CY; LEE, CP; CHANG, KH; LIU, DG; LIOU, DC; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering |
| 15-一月-1993 | TRANSMISSION ELECTRON-MICROSCOPY STUDY OF HEAVILY DELTA-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY | LIU, DG; FAN, JC; LEE, CP; CHANG, KH; LIOU, DC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
