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Issue DateTitleAuthor(s)
21-Aug-1995ABRUPTNESS OF GE COMPOSITION AT THE SI/SIGE INTERFACE GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITIONTSAI, WC; CHANG, CY; JUNG, TG; LIOU, TS; HUANG, GW; CHANG, TC; CHEN, LP; LIN, HC; 電控工程研究所; Institute of Electrical and Control Engineering
15-Oct-1994CALCULATION OF HOLE MOBILITY IN DOPED SIGE ALLOYS USING A MONTE-CARLO METHOD WITH A BOND ORBITAL BAND-STRUCTURELIOU, TS; WANG, TH; CHANG, CY; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
15-Jun-1995CALCULATION OF THE STRUCTURAL DEPENDENCE OF INFRARED-ABSORPTION IN P-TYPE STRAINED-LAYER SIGE/SI QUANTUM-WELLSLIOU, TS; WANG, TH; CHANG, CY; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 3 of 3