| 公開日期 | 標題 | 作者 |
| 1-五月-2004 | Characterization of interfacial layer of ultrathin Zr silicate on Si(100) using spectroscopic ellipsometry and HRTEM | Ahn, H; Chen, HW; Landheer, D; Wu, X; Chou, LJ; Chao, TS; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics |
| 1-五月-2002 | Characterization of thin ZrO2 films deposited using Zr(O '-Pr)(2)(thd)(2) and O-2 on Si(100) | Chen, HW; Landheer, D; Wu, X; Moisa, S; Sproule, GI; Chao, TS; Huang, TY; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics |
| 1-十二月-2004 | CoTiO3 high-kappa, dielectrics on HSG for DRAM applications | Chao, TS; Ku, WM; Lin, HC; Landheer, D; Wang, YY; Mori, Y; 奈米中心; Nano Facility Center |
| 1-六月-2002 | Physical and electrical characterization of ZrO(2) gate insulators deposited on Si(100) using Zr(O(i)-Pr)(2)(thd)(2) and O(2) | Chen, HW; Huang, TY; Landheer, D; Wu, X; Moisa, S; Sproule, GI; Chao, TS; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics |
| 1-六月-2002 | Physical and electrical characterization of ZrO2 gate insulators deposited on Si(100) using Zr(O-i-Pr)(2)(thd)(2) and O-2 | Chen, HW; Huang, TY; Landheer, D; Wu, X; Moisa, S; Sproule, GI; Chao, TS; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics |
| 1-四月-2003 | Structure and thermal stability of MOCVD ZrO2 films on Si (100) | Wu, X; Landheer, D; Graham, MJ; Chen, HW; Huang, TY; Chao, TS; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics |
| 1-七月-2003 | Ultrathin zirconium silicate films deposited on Si(100) using Zr(O(i)-Pr)(2)(thd)(2), Si(O(t)-Bu)(2)(thd)(2), and nitric oxide | Chen, HW; Huang, TY; Landheer, D; Wu, X; Moisa, S; Sproule, GI; Kim, JK; Lennard, WN; Chao, TS; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics |
| 1-七月-2001 | X-ray photoelectron spectroscopy of gate-quality silicon oxynitride films produced by annealing plasma-nitrided Si(100) in nitrous oxide | Chen, HW; Landheer, D; Chao, TS; Hulse, JE; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
