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Browsing by Author Landheer, D

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Showing results 1 to 8 of 8
Issue DateTitleAuthor(s)
1-May-2004Characterization of interfacial layer of ultrathin Zr silicate on Si(100) using spectroscopic ellipsometry and HRTEMAhn, H; Chen, HW; Landheer, D; Wu, X; Chou, LJ; Chao, TS; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-May-2002Characterization of thin ZrO2 films deposited using Zr(O '-Pr)(2)(thd)(2) and O-2 on Si(100)Chen, HW; Landheer, D; Wu, X; Moisa, S; Sproule, GI; Chao, TS; Huang, TY; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-Dec-2004CoTiO3 high-kappa, dielectrics on HSG for DRAM applicationsChao, TS; Ku, WM; Lin, HC; Landheer, D; Wang, YY; Mori, Y; 奈米中心; Nano Facility Center
1-Jun-2002Physical and electrical characterization of ZrO(2) gate insulators deposited on Si(100) using Zr(O(i)-Pr)(2)(thd)(2) and O(2)Chen, HW; Huang, TY; Landheer, D; Wu, X; Moisa, S; Sproule, GI; Chao, TS; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-Jun-2002Physical and electrical characterization of ZrO2 gate insulators deposited on Si(100) using Zr(O-i-Pr)(2)(thd)(2) and O-2Chen, HW; Huang, TY; Landheer, D; Wu, X; Moisa, S; Sproule, GI; Chao, TS; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-Apr-2003Structure and thermal stability of MOCVD ZrO2 films on Si (100)Wu, X; Landheer, D; Graham, MJ; Chen, HW; Huang, TY; Chao, TS; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-Jul-2003Ultrathin zirconium silicate films deposited on Si(100) using Zr(O(i)-Pr)(2)(thd)(2), Si(O(t)-Bu)(2)(thd)(2), and nitric oxideChen, HW; Huang, TY; Landheer, D; Wu, X; Moisa, S; Sproule, GI; Kim, JK; Lennard, WN; Chao, TS; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-Jul-2001X-ray photoelectron spectroscopy of gate-quality silicon oxynitride films produced by annealing plasma-nitrided Si(100) in nitrous oxideChen, HW; Landheer, D; Chao, TS; Hulse, JE; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 8 of 8