Browsing by Author Lee, Fang-Wei
Showing results 1 to 7 of 7
| Issue Date | Title | Author(s) |
| 1-Jul-2016 | Influence of different aspect ratios on the structural and electrical properties of GaN thin films grown on nanoscale-patterned sapphire substrates | Lee, Fang-Wei; Ke, Wen-Cheng; Cheng, Chun-Hong; Liao, Bo-Wei; Chen, Wei-Kuo; 電子物理學系; Department of Electrophysics |
| 21-Dec-2016 | InGaN-Based Light-Emitting Diodes Grown on a Micro/Nanoscale Hybrid Patterned Sapphire Substrate | Ke, Wen-Cheng; Lee, Fang-Wei; Chiang, Chih-Yung; Liang, Zhong-Yi; Chen, Wei-Kuo; Seong, Tae-Yeon; 電子物理學系; Department of Electrophysics |
| 31-Oct-2018 | InGaN-based light-emitting diodes grown on various aspect ratios of concave nanopattern sapphire substrate | Ke, Wen-Cheng; Chiang, Chih-Yung; Son, Widi; Lee, Fang-Wei; 電子物理學系; Department of Electrophysics |
| 10-Mar-2014 | Optical properties associated with strain relaxations in thick InGaN epitaxial films | Tsai, Wen-Che; Hsu, Chia-He; Fu, Shao-Fu; Lee, Fang-Wei; Chen, Chin-Yu; Chou, Wu-Ching; Chen, Wei-Kuo; Chang, Wen-Hao; 電子物理學系; Department of Electrophysics |
| 21-Oct-2015 | Trap-assisted tunneling in aluminum-doped ZnO/indium oxynitride nanodot interlayer Ohmic contacts on p-GaN | Ke, Wen-Cheng; Lee, Fang-Wei; Yang, Cheng-Yi; Chen, Wei-Kuo; Huang, Hao-Ping; 電子物理學系; Department of Electrophysics |
| 2016 | 使用奈米結構改善氮化銦鎵發光元件之光電及結構特性研究 | 李芳葦; 陳衛國; 柯文政; Lee, Fang-Wei; Chen, Wei-Kuo; Ke, Wen-Cheng; 電子物理系所 |
| 2009 | 高銦氮化銦鎵薄膜之成長與特性 | 李芳葦; Lee, Fang-Wei; 陳衛國; Chen, Wei-Kuo; 電子物理系所 |
