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Browsing by Author Lee, Kuen-Di

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Showing results 1 to 10 of 10
Issue DateTitleAuthor(s)
1-May-2015A 0.325 V, 600-kHz, 40-nm 72-kb 9T Subthreshold SRAM with Aligned Boosted Write Wordline and Negative Write Bitline Write-AssistLu, Chien-Yu; Chuang, Ching-Te; Jou, Shyh-Jye; Tu, Ming-Hsien; Wu, Ya-Ping; Huang, Chung-Ping; Kan, Paul-Sen; Huang, Huan-Shun; Lee, Kuen-Di; Kao, Yung-Shin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-2012A 0.33-V, 500-kHz, 3.94-mu W 40-nm 72-Kb 9T Subthreshold SRAM With Ripple Bit-Line Structure and Negative Bit-Line Write-AssistLu, Chien-Yu; Tu, Ming-Hsien; Yang, Hao-I; Wu, Ya-Ping; Huang, Huan-Shun; Lin, Yuh-Jiun; Lee, Kuen-Di; Kao, Yung-Shin; Chuang, Ching-Te; Jou, Shyh-Jye; Hwang, Wei; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
May-2016A 0.35 V, 375 kHz, 5.43 mu W, 40 nm, 128 kb, symmetrical 10T subthreshold SRAM with tri-state bit-lineWu, Shang-Lin; Lu, Chien-Yu; Tu, Ming-Hsien; Huang, Huan-Shun; Lee, Kuen-Di; Kao, Yung-Shin; Chuang, Ching-Te; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2017A 0.5-V 28-nm 256-kb Mini-Array Based 6T SRAM With Vtrip-Tracking Write-AssistWu, Shang-Lin; Li, Kuang-Yu; Huang, Po-Tsang; Hwang, Wei; Tu, Ming-Hsien; Lung, Sheng-Chi; Peng, Wei-Sheng; Huang, Huan-Shun; Lee, Kuen-Di; Kao, Yung-Shin; Chuang, Ching-Te; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2013A 40nm 1.0Mb Pipeline 6T SRAM with Variation-Tolerant Step-Up Word-Line and Adaptive Data-Aware Write-AssistChang, Chi-Shin; Yang, Hao-I; Liao, Wei-Nan; Lin, Yi-Wei; Lien, Nan-Chun; Chen, Chien-Hen; Chuang, Ching-Te; Hwang, Wei; Jou, Shyh-Jye; Tu, Ming-Hsien; Huang, Huan-Shun; Hu, Yong-Jyun; Kan, Paul-Sen; Cheng, Cheng-Yo; Wang, Wei-Chang; Wang, Jian-Hao; Lee, Kuen-Di; Chen, Chia-Cheng; Shih, Wei-Chiang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2012An All-Digital Bit Transistor Characterization Scheme for CMOS 6T SRAM ArrayLin, Geng-Cing; Wang, Shao-Cheng; Lin, Yi-Wei; Tsai, Ming-Chien; Chuang, Ching-Te; Jou, Shyh-Jye; Lien, Nan-Chun; Shih, Wei-Chiang; Lee, Kuen-Di; Chu, Jyun-Kai; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2012Design and Implementation of Dynamic Word-Line Pulse Write Margin Monitor for SRAMWang, Shao-Cheng; Lin, Geng-Cing; Lin, Yi-Wei; Tsai, Ming-Chien; Chiu, Yi-Wei; Jou, Shyh-Jye; Chuang, Ching-Te; Lien, Nan-Chun; Shih, Wei-Chiang; Lee, Kuen-Di; Chu, Jyun-Kai; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2012High-Performance 0.6V V-MIN 55nm 1.0Mb 6T SRAM with Adaptive BL BleederYang, Hao-I; Lin, Yi-Wei; Hsia, Mao-Chih; Lin, Geng-Cing; Chang, Chi-Shin; Chen, Yin-Nien; Chuang, Ching-Te; Hwang, Wei; Jou, Shyh-Jye; Lien, Nan-Chun; Li, Hung-Yu; Lee, Kuen-Di; Shih, Wei-Chiang; Wu, Ya-Ping; Lee, Wen-Ta; Hsu, Chih-Chiang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2011A High-Performance Low V(MIN) 55nm 512Kb Disturb-Free 8T SRAM with Adaptive VVSS ControlYang, Hao-I; Yang, Shih-Chi; Hsia, Mao-Chih; Lin, Yung-Wei; Lin, Yi-Wei; Chen, Chien-Hen; Chang, Chi-Shin; Lin, Geng-Cing; Chen, Yin-Nien; Chuang, Ching-Te; Hwang, Wei; Jou, Shyh-Jye; Lien, Nan-Chun; Li, Hung-Yu; Lee, Kuen-Di; Shih, Wei-Chiang; Wu, Ya-Ping; Lee, Wen-Ta; Hsu, Chih-Chiang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2012A Single-Ended Disturb-Free 9T Subthreshold SRAM With Cross-Point Data-Aware Write Word-Line Structure, Negative Bit-Line, and Adaptive Read Operation Timing TracingTu, Ming-Hsien; Lin, Jihi-Yu; Tsai, Ming-Chien; Lu, Chien-Yu; Lin, Yuh-Jiun; Wang, Meng-Hsueh; Huang, Huan-Shun; Lee, Kuen-Di; Shih, Wei-Chiang (Willis); Jou, Shyh-Jye; Chuang, Ching-Te; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 10 of 10