| 公開日期 | 標題 | 作者 |
| 15-五月-2001 | Activation of p-type GaN in a pure oxygen ambient | Wen, TC; Lee, SC; Lee, WI; Chen, TY; Chan, SH; Tsang, JS; 電子物理學系; 友訊交大聯合研發中心; Department of Electrophysics; D Link NCTU Joint Res Ctr |
| 1-七月-1996 | Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance method | Chen, JF; Chen, NC; Huang, WY; Lee, WI; Feng, MS; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics |
| 1-七月-1996 | Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance method | Chen, JF; Chen, NC; Huang, WY; Lee, WI; Feng, MS; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics |
| 2000 | Characteristics of optical properties of the interrupt growth method on InGaN/GaN MQW structures | Lin, CF; Shu, CK; Lee, WH; Wen, TC; Chu, CF; Fang, JY; Chen, WK; Lee, WI; Wang, SC; 光電工程學系; Department of Photonics |
| 1-三月-2001 | Characterization of p-type InxGa1-xN grown by metalorganic chemical vapor deposition | Wen, TC; Lee, WI; Sheu, JK; Chi, GC; 友訊交大聯合研發中心; D Link NCTU Joint Res Ctr |
| 15-九月-1996 | Deep level transient spectroscopy depth profile measurements of polycrystalline zinc oxide ceramic | Lee, WI; Young, RL; Chen, WK; 交大名義發表; 友訊交大聯合研發中心; National Chiao Tung University; D Link NCTU Joint Res Ctr |
| 15-九月-1996 | Deep level transient spectroscopy depth profile measurements of polycrystalline zinc oxide ceramic | Lee, WI; Young, RL; Chen, WK; 電子物理學系; Department of Electrophysics |
| 22-七月-1996 | Defects and degradation in ZnO varistor | Lee, WI; Young, RL; 交大名義發表; 友訊交大聯合研發中心; National Chiao Tung University; D Link NCTU Joint Res Ctr |
| 16-九月-1996 | Degradation phenomena of multilayer ZnO-glass varistors studied by deep level transient spectroscopy | Wang, YP; Lee, WI; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 16-九月-1996 | Degradation phenomena of multilayer ZnO-glass varistors studied by deep level transient spectroscopy | Wang, YP; Lee, WI; Tseng, TY; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics |
| 1-八月-1999 | A dopant-related defect in Te-doped AlInP | Wu, YR; Sung, WJ; Wen, TC; Lee, SC; Lee, WI; 電子物理學系; 友訊交大聯合研發中心; Department of Electrophysics; D Link NCTU Joint Res Ctr |
| 25-七月-2003 | Electrooptical properties of GaNAs/GaAs multiple quantum well structures | Lee, JR; Chen, YY; Lu, CR; Lee, WI; Lee, SC; 電子物理學系; Department of Electrophysics |
| 1-五月-1998 | Formation of two-dimensional arsenic precipitation in superlattice structures of alternately undoped and heavily Be doped GaAs with varying periods grown by low-temperature molecular beam epitaxy | Su, ZA; Huang, JH; Lee, WI; 電子物理學系; Department of Electrophysics |
| 1-五月-2000 | Ga0.5In0.5P barrier layer for wet oxidation of AlAs | Lee, SC; Lee, WI; 電子物理學系; Department of Electrophysics |
| 1-九月-2001 | Influence of barrier growth temperature on the properties of InGaN/GaN quantum Well | Wen, TC; Lee, WI; 電子物理學系; 友訊交大聯合研發中心; Department of Electrophysics; D Link NCTU Joint Res Ctr |
| 2001 | Influence of barrier growth temperature on the properties of InGaN/GaN quantum wells | Wen, TC; Lee, SC; Lee, WI; 友訊交大聯合研發中心; D Link NCTU Joint Res Ctr |
| 1-一月-2005 | Investigation of populated InAs/GaAs quantum dots by photoluminescence and photoreflectance | Lee, JR; Lu, CR; Lee, WI; Lee, SC; 電子物理學系; Department of Electrophysics |
| 29-四月-2003 | Liquid phase deposited SiO2 on GaN | Wu, HR; Lee, KW; Nian, TB; Chou, DW; Wu, JJH; Wang, YH; Houng, MP; Sze, PW; Su, YK; Chang, SJ; Ho, CH; Chiang, CI; Chern, YT; Juang, FS; Wen, TC; Lee, WI; Chyi, JI; 電子物理學系; Department of Electrophysics |
| 1-七月-2003 | Low resistance Ohmic contacts to n-GaN by Ar plasma and forming gas ambient treatments | Lee, CC; Lee, CP; Yeh, MH; Lee, WI; Kuo, CT; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 11-一月-1999 | Majority- and minority-carrier traps in Te-doped AlInP | Wu, YR; Sung, WJ; Lee, WI; 電子物理學系; 友訊交大聯合研發中心; Department of Electrophysics; D Link NCTU Joint Res Ctr |
