1. You are Here：

Browsing by Author Lee, Wei-Han

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
or enter first few letters:  
Showing results 1 to 5 of 5
Issue DateTitleAuthor(s)
1-Feb-2013Error-Free Matthiessen's Rule in the MOSFET Universal Mobility RegionChen, Ming-Jer; Lee, Wei-Han; Huang, Yi-Hui; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2012Evidence for the Fourfold-Valley Confinement Electron Piezo-Effective-Mass Coefficient in Inversion Layers of < 110 > Uniaxial-Tensile-Strained (001) nMOSFETsChen, Ming-Jer; Lee, Wei-Han; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2011Gate Direct Tunneling Current in Uniaxially Compressive Strained nMOSFETs: A Sensitive Measure of Electron Piezo Effective MassLee, Wei-Han; Chen, Ming-Jer; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2012n型反置層精準量子計算：應變、次能帶、遷移率及三維結構李韋漢; Lee, Wei-Han; 陳明哲; Chen, Ming-Jer; 電子研究所
1-Apr-2011Temperature-Dependent Remote-Coulomb-Limited Electron Mobility in n(+)-Polysilicon Ultrathin Gate Oxide nMOSFETsChen, Ming-Jer; Chang, Sou-Chi; Kuang, Shin-Jiun; Lee, Chien-Chih; Lee, Wei-Han; Cheng, Kuan-Hao; Zhan, Yi-Hsien; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 5 of 5