1. You are Here：

Browsing by Author Lee, Wei-I

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
or enter first few letters:  
Showing results 1 to 20 of 59  next >
Issue DateTitleAuthor(s)
Jul-2016Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WN (X) Schottky Metal Structures for High-Power ApplicationsHsieh, Ting-En; Lin, Yueh-Chin; Chu, Chung-Ming; Chuang, Yu-Lin; Huang, Yu-Xiang; Shi, Wang-Cheng; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Lee, Wei-I; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 電子物理學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Institute of Photonic System; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
2008Comparison between extended microtunnels along different crystal orientations in GaNWu, Pei-Lun; Huang, Hsin-Hsiung; Zeng, Hung-Yu; Liu, Po-Chun; Lai, Chih-Ming; Tsay, Jeng-Dar; Lee, Wei-I; 電子物理學系; Department of Electrophysics
13-Dec-2014The effect of free-standing GaN substrate on carrier localization in ultraviolet InGaN light-emitting diodesTsai, Ming-Ta; Chu, Chung-Ming; Huang, Che-Hsuan; Wu, Yin-Hao; Chiu, Ching-Hsueh; Li, Zhen-Yu; Tu, Po-Min; Lee, Wei-I; Kuo, Hao-Chung; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
1-May-2017The effect of the flipped classroom approach to OpenCourseWare instruction on students' self-regulationSun, Jerry Chih-Yuan; Wu, Yu-Ting; Lee, Wei-I; 教育研究所; 電子物理學系; Institute of Education; Department of Electrophysics
Feb-2016The Effect of the Thickness of the Low Temperature AlN Nucleation Layer on the Material Properties of GaN Grown on a Double-Step AlN Buffer Layer by the MOCVD MethodHuang, Wei-Ching; Chu, Chung-Ming; Hsieh, Chi-Feng; Wong, Yuen-Yee; Chen, Kai-Wei; Lee, Wei-I; Tu, Yung-Yi; Chang, Edward-Yi; Dee, Chang Fu; Majlis, B. Y.; Yap, S. L.; 材料科學與工程學系; 電機學院; Department of Materials Science and Engineering; College of Electrical and Computer Engineering
1-May-2009Effective reduction of bowing in free-standing GaN by N-face regrowth with hydride vapor-phase epitaxyChen, Kuei-Ming; Huang, Hsin-Hsiung; Kuo, Yi-Lin; Wu, Pei-Lun; Chu, Ting-Li; Yu, Hung-Wei; Lee, Wei-I; 電子物理學系; Department of Electrophysics
30-Apr-2007Effects of strained InGaN interlayer on contact resistance between p-GaN and indium tin oxideLee, Chi-Ling; Lee, Wei-I; 電子物理學系; Department of Electrophysics
5-Mar-2009Etching method for nitride semiconductorLee, Wei-I; Huang, Hsin-Hsiung; Zeng, Hung-Yu
13-Nov-2006Extended microtunnels in GaN prepared by wet chemical etchHuang, Hsin-Hsiung; Zeng, Hung-Yu; Lee, Chi-Ling; Lee, Shih-Chang; Lee, Wei-I; 電子物理學系; Department of Electrophysics
2008Formation of nitride laser cavities with cleaved facets on transferred laser diodes on GaAs substratesYu, Wen-Chien; Ye, Shu-Mei; Hsiao, Feng-Ke; Lee, Chi-Ling; Lee, Wei-I; 友訊交大聯合研發中心; D Link NCTU Joint Res Ctr
2012Free-standing a-plane GaN substrates grown by HVPEWu, Yin-Hao; Yeh, Yen-Hsien; Chen, Kuei-Ming; Yang, Yu-Jen; Lee, Wei-I; 電子物理學系; Department of Electrophysics
1-Dec-2014The growth of heteroepitaxial CuInSe2 on free-standing N-polar GaNShih, Cheng-Hung; Lo, Ikai; You, Shuo-Ting; Tsai, Cheng-Da; Tseng, Bae-Heng; Chen, Yun-Feng; Chen, Chiao-Hsin; Lee, Chuo-Han; Lee, Wei-I; Hsu, Gary Z. L.; 電子物理學系; Department of Electrophysics
7-Jul-2014High performance 380-nm ultraviolet light-emitting-diodes with 3% efficiency droop by using free-standing GaN substrate manufacturing from GaAs substrateShieh, Chen-Yu; Tsai, Ming-Ta; Li, Zhen-Yu; Kuo, Hao-Chung; Chang, Jeng-Yang; Chi, Gou-Chung; Lee, Wei-I; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
21-Apr-2015High-efficiency and low assembly-dependent chip-scale package for white light-emitting diodesHuang, Che-Hsuan; Chen, Kuo-Ju; Tsai, Ming-Ta; Shih, Min-Hsiung; Sun, Chia-Wei; Lee, Wei-I; Lin, Chien-Chung; Kuo, Hao Chung; 光電系統研究所; 光電工程學系; Institute of Photonic System; Department of Photonics
2009High-Quality Free-standing GaN Thick-films Prepared by Hydride Vapor Phase Epitaxy using Stress Reducing TechniquesHuang, Hsin-Hsiung; Lee, Wei-I; Chen, Kuei-Ming; Chu, Ting-Li; Wu, Pei-Lun; Yu, Hung-Wei; Liu, Po-Chun; Chao, Chu-Li; Chi, Tung-Wei; Tsay, Jenq-Dar; Tu, Li-Wei; 電子物理學系; Department of Electrophysics
2011Hydrogen etch of GaN and its application to produce porous GaN cavesYeh, Yen-Hsien; Hsu, Ying-Chia; Wu, Yin-Hao; Chen, Kuei-Ming; Lee, Wei-I; 電子物理學系; Department of Electrophysics
15-Oct-2011Hydrogen etching of GaN and its application to produce free-standing GaN thick filmsYeh, Yen-Hsien; Chen, Kuei-Ming; Wu, Yin-Hao; Hsu, Ying-Chia; Yu, Tzu-Yi; Lee, Wei-I; 電子物理學系; Department of Electrophysics
1-Jan-2011Hydrogen etching on the surface of GaN for producing patterned structuresYeh, Yen-Hsien; Chen, Kuei-Ming; Wu, Yin-Hao; Hsu, Ying-Chia; Lee, Wei-I; 電子物理學系; Department of Electrophysics
Apr-2016Investigations of GaN growth on the sapphire substrate by MOCVD method with different AlN buffer deposition temperaturesHuang, Wei-Ching; Chu, Chung-Ming; Wong, Yuen Yee; Chen, Kai-Wei; Lin, Yen-Ku; Wu, Chia-Hsun; Lee, Wei-I; Chang, Edward-Yi; 材料科學與工程學系; 電機學院; Department of Materials Science and Engineering; College of Electrical and Computer Engineering
5-Aug-2010MANUFACTURE METHOD OF MULTILAYER STRUCTURE HAVING NON-POLAR A-PLANE III-NITRIDE LAYERLee, Wei-I; Chen, Jenn-Fang; Chiang, Chen-Hao
Showing results 1 to 20 of 59  next >