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Browsing by Author Liang, M. S.

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Showing results 1 to 7 of 7
Issue DateTitleAuthor(s)
1-Nov-2009The Dependence of the Performance of Strained NMOSFETs on Channel WidthYeh, Lingyen; Liao, Ming Han; Chen, Chun Heng; Wu, Jun; Lee, Joseph Ya-Min; Liu, Chee Wee; Lee, T. L.; Liang, M. S.; 材料科學與工程學系; Department of Materials Science and Engineering
1-Sep-2006HfSiON n-MOSFETs using low-work function HfSi chi gateWu, C. H.; Hung, B. F.; Chin, Albert; Wang, S. J.; Yen, F. Y.; Hou, Y. T.; Jin, Y.; Tao, H. J.; Chen, S. C.; Liang, M. S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2006High temperature stable [Ir3Si-TaN]/HfLaON CMOS with large work-function differenceWu, C. H.; Hung, B. F.; Chin, Albert; Wang, S. J.; Chen, W. J.; Wang, X. P.; Li, M. -F.; Zhu, C.; Jin, Y.; Tao, H. J.; Chen, S. C.; Liang, M. S.; 奈米科技中心; Center for Nanoscience and Technology
1-Apr-2007High-temperature stable HfLaON p-MOSFETs with high-work-function Ir3Si gateWu, C. H.; Hung, B. F.; Chin, Albert; Wang, S. J.; Wang, X. P.; Li, M. -F.; Zhu, C.; Yen, F. Y.; Hou, Y. T.; Jin, Y.; Tao, H. J.; Chen, S. C.; Liang, M. S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2011Mechanical properties and fracture mechanism of porous SiOCH low-k dielectricsChang, H. L.; Kuo, C. T.; Liang, M. S.; 材料科學與工程學系; 高階主管管理碩士學程; Department of Materials Science and Engineering; Degree Program of Master of Business Administration
26-Jul-2010Oxygen vacancy estimation of high k metal gate using thermal dynamic modelChang, H. L.; Liang, M. S.; 材料科學與工程學系; Department of Materials Science and Engineering
2006Relaxation-free strained SiGe with super anneal for 32nm high performance PMOS and beyondYu, Ming H.; Li, J. H.; Lin, H. H.; Chen, C. H.; Ku, K. C.; Nieh, C. F.; Hisa, H.; Sheu, Y. M.; Tsai, C. W.; Wang, Y. L.; Chu, H. Y.; Cheng, H. C.; Lee, T. L.; Chen, S. C.; Liang, M. S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 7 of 7