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| 公開日期 | 標題 | 作者 |
| 2008 | Advanced gate-all-around fin-like poly-Si TFTs with multiple nanowire channels | Tu, Shih-Wei; Liao, Ta-Chuan; Lin, Wei-Kai; Liu, Cheng-Chin; Tai, Ya-Hsiang; Cheng, Huang-Chung; Chien, Feng-Tso; Chen, Chii-Wen; Chen, Wan-Lu; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-Aug-2010 | Effect of Nitrogen Plasma Treatment on Electrical Characteristics for Pd Nanocrystals in Nonvolatile Memory | Kang, Tsung-Kuei; Liao, Ta-Chuan; Lin, Cheng-Li; Wu, Wen-Fa; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-May-2010 | Field enhancement of omega-shaped-gated poly-Si TFT SONOS memory fabricated by a simple sidewall spacer formation | Wu, Chun-Yu; Liao, Ta-Chuan; Yu, Ming-H; Chen, Sheng-Kai; Tsai, Chung-Min; Cheng, Huang-Chung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-Sep-2011 | Gate-All-Around Poly-Si TFTs With Single-Crystal-Like Nanowire Channels | Kang, Tsung-Kuei; Liao, Ta-Chuan; Lin, Chia-Min; Liu, Han-Wen; Wang, Fang-Hsing; Cheng, Huang-Chung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 27-Feb-2012 | Gate-all-around polycrystalline-silicon thin-film transistors with self-aligned grain-growth nanowire channels | Liao, Ta-Chuan; Kang, Tsung-Kuei; Lin, Chia-Min; Wu, Chun-Yu; Cheng, Huang-Chung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-九月-2012 | High Sensitivity of Dry-Type Nanowire Sensors With High-k Dielectrics for pH Detection via Capillary Atomic Force Microscope Tip Coating Technique | Cheng, Huang-Chung; Wu, Chun-Yu; Hsu, Po-Yen; Wang, Chao-Lung; Liao, Ta-Chuan; Wu, You-Lin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-四月-2008 | High-performance solid-phase crystallized polycrystalline silicon thin-film transistors with floating-channel structure | Chang, Chia-Wen; Deng, Chih-Kang; Chang, Che-Lun; Liao, Ta-Chuan; Lei, Tan-Fu; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-七月-2011 | Improved characteristics for Pd nanocrystal memory with stacked HfAlO-SiO(2) tunnel layer | Kang, Tsung-Kuei; Liu, Han-Wen; Wang, Fang-Hsing; Lin, Cheng-Li; Liao, Ta-Chuan; Wu, Wen-Fa; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-七月-2011 | Improved characteristics for Pd nanocrystal memory with stacked HfAlO-SiO2 tunnel layer | Kang, Tsung-Kuei; Liu, Han-Wen; Wang, Fang-Hsing; Lin, Cheng-Li; Liao, Ta-Chuan; Wu, Wen-Fa; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 2008 | Improving electrical performance of the scaled low-temperature poly-Si thin film transistors using vacuum encapsulation technique | Lin, Wei-Kai; Liao, Ta-Chuan; Wu, Chun-Yu; Tu, Shih-Wei; Liu, Yen-Ting; Lin, Jun-Quan; Cheng, Huang-Chung; Chien, Feng-Tso; Chen, Wan-Lu; Chen, Chii-Wen; Tai, Ya-Hsiang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 2010 | A New Charge-Trap-Engineered Memory Device with Silicon-Oxide-Nitride-Vacuum-Silicon (SONVAS) Structure for LTPS-TFT-Based Applications | Liao, Ta-Chuan; Wu, Chun-Yu; Chen, Sheng-Kai; Yu, Ming H.; Kang, Tsung-Kuei; Cheng, Huang-Chung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-八月-2011 | Novel Dielectric-Engineered Trapping-Charge Poly-Si-TFT Memory With a TiN-Alumina-Nitride-Vacuum-Silicon Structure | Wu, Chun-Yu; Liu, Yen-Ting; Liao, Ta-Chuan; Yu, Ming H.; Cheng, Huang-Chung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-八月-2008 | Novel gate-all-around poly-Si TFTs with multiple nanowire channels | Liao, Ta-Chuan; Tu, Shih-Wei; Yu, Ming H.; Lin, Wei-Kai; Liu, Cheng-Chin; Chang, Kuo-Jui; Tai, Ya-Hsiang; Cheng, Huang-Chung; 電子工程學系及電子研究所; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Institute of Display |
| 1-八月-2015 | Novel junctionless silicon-oxide-nitride-oxide-silicon memory devices with field-enhanced poly-Si nanowire structure | Chou, Chia-Hsin; Chan, Wei-Sheng; Wu, Chun-Yu; Lee, I-Che; Liao, Ta-Chuan; Wang, Chao-Lung; Wang, Kuang-Yu; Cheng, Huang-Chung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 2009 | A Novel LTPS-TFT-Based Charge-Trapping Memory Device with Field-Enhanced Nanowire Structure | Liao, Ta-Chuan; Chen, Sheng-Kai; Yu, Ming H.; Wu, Chun-Yu; Kang, Tsung-Kuei; Chien, Feng-Tso; Liu, Yen-Ting; Lin, Chia-Min; Cheng, Huang-Chung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 2009 | Novel Omega-Shaped-Gated TFT SONOS Memory | Liao, Ta-Chuan; Chen, Sheng-Kai; Kang, Tsung-Kuei; Hsu, Pang-Yu; Lin, Chia-Min; Cheng, Huang-Chung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-七月-2012 | A Novel Polysilicon Field-Enhanced Nanowire Thin-Film Transistor with the TiN-Hafnia-Nitride-Vacuum-Silicon (THNVAS) Structure for Nonvolatile Memory Applications | Wu, Chun-Yu; Liao, Ta-Chuan; Liu, Yen-Ting; Yu, Ming H.; Cheng, Huang-Chung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 2007 | A novel self-aligned field induced drain polycrystalline silicon thin film transistor fabricated by using a selective side etch process | Liao, Ta-Chuan; Wu, Chun-Yu; Chien, Feng-Tso; Tsai, Chun-Chien; Chen, Hsiu-Hsin; Kung, Chung-Yuan; Cheng, Huang-Chung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-七月-2011 | Passivation-Induced Subthreshold Kink Effect of Ultrathin-Oxide Low-Temperature Polycrystalline Silicon Thin Film Transistors | Tsai, Mon-Chin; Liao, Ta-Chuan; Lee, I-Che; Cheng, Huang-Chung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 2006 | A poly-Si thin-film transistor with the in situ vacuum gaps under the T-shaped-gated electrode | Liao, Ta-Chuan; Wu, Chun-Yu; Chien, Feng-Tso; Tsai, Chun-Chien; Chen, Hsiu-Hsin; Kung, Chung-Yuan; Cheng, Huang-Chung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
