瀏覽 的方式： 作者 Lin, Hung-Ta
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| 公開日期 | 標題 | 作者 |
| 1-四月-2014 | Low interface trap density Al2O3/In0.53Ga0.47As MOS capacitor fabricated on MOCVD-grown InGaAs epitaxial layer on Si substrate | Lin, Yueh-Chin; Huang, Mao-Lin; Chen, Chen-Yu; Chen, Meng-Ku; Lin, Hung-Ta; Tsai, Pang-Yan; Lin, Chun-Hsiung; Chang, Hui-Cheng; Lee, Tze-Liang; Lo, Chia-Chiung; Jang, Syun-Ming; Diaz, Carlos H.; Hwang, He-Yong; Sun, Yuan-Chen; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics |
