瀏覽 的方式： 作者 Lin, L. F.
顯示 1 到 4 筆資料，總共 4 筆
| 公開日期 | 標題 | 作者 |
| 2007 | Cu/CuMg gate electrode for the application of hydrogenated amorphous silicon thin-film transistors | Wang, M. C.; Chang, T.-C.; Liu, Po-Tsun; Li, Y. Y.; Xiao, R. W.; Lin, L. F.; Chen, J. R.; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display |
| 9-七月-2007 | n(+)-doped-layer-free microcrystalline silicon thin film transistors fabricated with the CuMg as source/drain metal | Wang, M. C.; Chang, T. C.; Liu, Po-Tsun; Xiao, R. W.; Lin, L. F.; Li, Y. Y.; Yeh, F. S.; Chen, J. R.; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display |
| 2007 | Schottky barrier height for the photo leakage current transformation of a-Si : H TFTs | Wang, M. C.; Chang, T. C.; Liu, Po-Tsun; Li, Y. Y.; Xiao, R. W.; Lin, L. F.; Chen, J. R.; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display |
| 6-八月-2007 | Suppression of Schottky leakage current in island-in amorphous silicon thin film transistors with the Cu/CuMg as source/drain metal | Wang, M. C.; Chang, T. C.; Liu, Po-Tsun; Xiao, R. W.; Lin, L. F.; Li, Y. Y.; Huang, F. S.; Chen, J. R.; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display |
