1. You are Here：

Browsing by Author Lin, Meng-Han

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
or enter first few letters:  
Showing results 1 to 13 of 13
Issue DateTitleAuthor(s)
1-Jan-2009Characteristics of SrTiO(3) Insulated Layer in SBT Ferroelectric Thin FilmsChou, Hsiu-Yu; Lee, En-Ko; Lin, Meng-Han; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2009Characteristics of SrTiO3 Insulated Layer in SBT Ferroelectric Thin FilmsChou, Hsiu-Yu; Lee, En-Ko; Lin, Meng-Han; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-2010Effects of Vanadium Doping on Resistive Switching Characteristics and Mechanisms of SrZrO(3)-Based Memory FilmsLin, Meng-Han; Wu, Ming-Chi; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-2010Effects of Vanadium Doping on Resistive Switching Characteristics and Mechanisms of SrZrO3-Based Memory FilmsLin, Meng-Han; Wu, Ming-Chi; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2011High Device Yield of Resistive Switching Characteristics in Oxygen-Annealed SrZrO(3) Memory DevicesLin, Meng-Han; Wu, Ming-Chi; Huang, Yi-Han; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2011High Device Yield of Resistive Switching Characteristics in Oxygen-Annealed SrZrO3 Memory DevicesLin, Meng-Han; Wu, Ming-Chi; Huang, Yi-Han; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
28-Jul-2010High-speed and localized resistive switching characteristics of double-layer SrZrO(3) memory devicesLin, Meng-Han; Wu, Ming-Chi; Huang, Chun-Yang; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
28-Jul-2010High-speed and localized resistive switching characteristics of double-layer SrZrO3 memory devicesLin, Meng-Han; Wu, Ming-Chi; Huang, Chun-Yang; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2010Highly Stable SrZrO3 Bipolar Resistive Switching Memory by Ti Modulation LayerWu, Ming-Chi; Lin, Meng-Han; Yeh, Yu-Ting; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Oct-2008Improvement of resistive switching characteristics in SrZrO3 thin films with embedded Cr layerLin, Chih-Yang; Lin, Meng-Han; Wu, Ming-Chi; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009Nonpolar Bistable Resistive Switching Behaviors of Bismuth Titanate Oxide Thin FilmLin, Meng-Han; Wu, Ming-Chi; Lin, Chun-Chieh; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-2007Voltage-polarity-independent and high-speed resistive switching properties of v-doped SrZrO3 thin filmsLin, Chun-Chieh; Lin, Chih-Yang; Lin, Meng-Han; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2011鋯酸鍶基電阻式記憶元件特性與機制之研究林孟漢; Lin, Meng-Han; 曾俊元; Tseng, Tseung-Yuen; 電子研究所
Showing results 1 to 13 of 13