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Showing results 1 to 6 of 6
Issue DateTitleAuthor(s)
1-Jan-2001Barrier capability of TaNx films deposited by different nitrogen flow rate against Cu diffusion in Cu/TaNx/n(+)-p junction diodesYang, WL; Wu, WF; Liu, DG; Wu, CC; Ou, KL; 機械工程學系; Department of Mechanical Engineering
15-Jun-2000Improvement of polysilicon oxide integrity using NF3-annealingYang, WL; Shieh, MS; Chen, YM; Chao, TS; Liu, DG; Lei, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-2000Retardation in the chemical-mechanical polish of the boron-doped polysilicon and siliconYang, WL; Cheng, CY; Tsai, MS; Liu, DG; Shieh, MS; 交大名義發表; National Chiao Tung University
15-Oct-1997Simulation and analysis of the capacitance-voltage characteristics of the delta-doped semiconductorsLiu, DG; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-Oct-1997Simulation and analysis of the capacitance-voltage characteristics of the delta-doped semiconductorsLiu, DG; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
19-Jun-1997Suppression of boron penetration by using inductive-coupling-nitrogen-plasma in stacked amorphous/polysilicon gate structureYang, WL; Lin, CJ; Chao, TS; Liu, DG; Lei, TF; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 6 of 6