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Showing results 1 to 16 of 16
Issue DateTitleAuthor(s)
2009Cell Endurance Prediction from a Large-area SONOS CapacitorLee, C. H.; Tu, W. H.; Gu, S. H.; Wu, C. W.; Lin, S. W.; Yeh, T. H.; Chen, K. F.; Chen, Y. J.; Hsieh, J. Y.; Huang, I. J.; Zous, N. K.; Han, T. T.; Chen, M. S.; Lu, W. P.; Chen, K. C.; Wang, Tahui; Lu, C. Y.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-2012A Comparative Study of NBTI and RTN Amplitude Distributions in High-kappa Gate Dielectric pMOSFETsChiu, J. P.; Chung, Y. T.; Wang, Tahui; Chen, Min-Cheng; Lu, C. Y.; Yu, K. F.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Oct-2011Defect density reduction of the Al(2)O(3)/GaAs(001) interface by using H(2)S molecular beam passivationMerckling, C.; Chang, Y. C.; Lu, C. Y.; Penaud, J.; Brammertz, G.; Scarrozza, M.; Pourtois, G.; Kwo, J.; Hong, M.; Dekoster, J.; Meuris, M.; Heyns, M.; Caymax, M.; 交大名義發表; National Chiao Tung University
1-Oct-2011Defect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivationMerckling, C.; Chang, Y. C.; Lu, C. Y.; Penaud, J.; Brammertz, G.; Scarrozza, M.; Pourtois, G.; Kwo, J.; Hong, M.; Dekoster, J.; Meuris, M.; Heyns, M.; Caymax, M.; 交大名義發表; National Chiao Tung University
1-Apr-2008Development of new features of ant colony optimization for flowshop schedulingLin, B. M. T.; Lu, C. Y.; Shyu, S. J.; Tsai, C. Y.; 資訊管理與財務金融系 註：原資管所+財金所; Department of Information Management and Finance
1-Sep-2017Device Instability of ReRAM and a Novel Reference Cell Design for Wide Temperature Range OperationLin, Y. H.; Lin, Y. Y.; Lee, F. M.; Ho, Y. H.; Hsu, K. C.; Lee, M. H.; Lee, D. Y.; Chiang, K. H.; Yang, C. C.; Li, C. H.; Wu, S. W.; Lei, C. Y.; Lin, C. M.; Chen, C. J.; Chen, K. H.; Lung, H. L.; Wang, K. C.; Tseng, T. Y.; Lu, C. Y.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2007Dynamic NBTI characteristics of PMOSFETs with PE-SiN cappingLu, C. Y.; Lin, H. C.; Lee, Y. J.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2011Electrical Characterization of Al(2)O(3)/n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface TreatmentsTrinh, H. D.; Brammertz, G.; Chang, E. Y.; Kuo, C. I.; Lu, C. Y.; Lin, Y. C.; Nguyen, H. Q.; Wong, Y. Y.; Tran, B. T.; Kakushima, K.; Iwai, H.; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-Jun-2011Electrical Characterization of Al2O3/n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface TreatmentsTrinh, H. D.; Brammertz, G.; Chang, E. Y.; Kuo, C. I.; Lu, C. Y.; Lin, Y. C.; Nguyen, H. Q.; Wong, Y. Y.; Tran, B. T.; Kakushima, K.; Iwai, H.; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-Jan-2011Experimental and modeling on atomic layer deposition Al2O3/n-InAs metal-oxide-semiconductor capacitors with various surface treatmentsTrinh, H. D.; Chang, E. Y.; Brammertz, G.; Lu, C. Y.; Nguyen, H. Q.; Tran, B. T.; 材料科學與工程學系; Department of Materials Science and Engineering
1-Jan-2011Experimental and modeling on atomic layer deposition Al2O3/n-InAs metal-oxide-semiconductor capacitors with various surface treatmentsTrinh, H. D.; Chang, E. Y.; Brammertz, G.; Lu, C. Y.; Nguyen, H. Q.; Tran, B. T.; 材料科學與工程學系; Department of Materials Science and Engineering
1-Apr-2011H(2)S molecular beam passivation of Ge(001)Merckling, C.; Chang, Y. C.; Lu, C. Y.; Penaud, J.; El-Kazzi, M.; Bellenger, F.; Brammertz, G.; Hong, M.; Kwo, J.; Meuris, M.; Dekoster, J.; Heyns, M. M.; Caymax, M.; 交大名義發表; National Chiao Tung University
1-Apr-2011H2S molecular beam passivation of Ge(001)Merckling, C.; Chang, Y. C.; Lu, C. Y.; Penaud, J.; El-Kazzi, M.; Bellenger, F.; Brammertz, G.; Hong, M.; Kwo, J.; Meuris, M.; Dekoster, J.; Heyns, M. M.; Caymax, M.; 交大名義發表; National Chiao Tung University
1-Jan-2007A highly reliable self-aligned graded oxide WOx resistance memory: Conduction mechanisms and reliabilityHo, ChiaHua; Lai, E. K.; Lee, M. D.; Pan, C. L.; Yao, Y. D.; Hsieh, K. Y.; Liu, Rich; Lu, C. Y.; 材料科學與工程學系; Department of Materials Science and Engineering
1-Jul-2010Influence of the device geometry on the Schottky gate characteristics of AlGaN/GaN HEMTsLu, C. Y.; Bahat-Treidel, E.; Hilt, O.; Lossy, R.; Chaturvedi, N.; Chang, E. Y.; Wuerfl, J.; Traenkle, G.; 材料科學與工程學系; Department of Materials Science and Engineering
2009Overall Operation Considerations for a SONOS-based MemoryLee, C. H.; Tu, W. H.; Chong, L. H.; Gu, S. H.; Chen, K. F.; Chen, Y. J.; Hsieh, J. Y.; Huang, I. J.; Zous, N. K.; Han, T. T.; Chen, M. S.; Lu, W. P.; Chen, K. C.; Wang, Tahui; Lu, C. Y.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 16 of 16