瀏覽 的方式： 作者 Lu, P. Y.
顯示 1 到 3 筆資料，總共 3 筆
| 公開日期 | 標題 | 作者 |
| 2014 | The Experimental Demonstration of the BTI-Induced Breakdown Path in 28nm High-k Metal Gate Technology CMOS Devices | Hsieh, E. R.; Lu, P. Y.; Chung, Steve S.; Chang, K. Y.; Liu, C. H.; Ke, J. C.; Yang, C. W.; Tsai, C. T.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-一月-2014 | The Observation of BTI-induced RTN Traps in Inversion and Accumulation Modes on HfO2 High-k Metal Gate 28nm CMOS Devices | Wu, P. C.; Hsieh, E. R.; Lu, P. Y.; Chung, Steve S.; Chang, K. Y.; Liu, C. H.; Ke, J. C.; Yang, C. W.; Tsai, C. T.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 2015 | The RTN Measurement Technique on Leakage Path Finding in Advanced High-k Metal Gate CMOS Devices | Hsieh, E. R.; Lu, P. Y.; Chung, Steve S.; Ke, J. C.; Yang, C. W.; Tsai, C. T.; Yew, T. R.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
