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显示 1 到 5 笔资料，总共 5 笔
公开日期标题作者
1-一月-2018Excellent High Temperature Retention of TiOXNV ReRAM by Interfacial Layer EngineeringLin, Yu-Hsuan; Lee, Dai-Ying; Wang, Chao-Hung; Lee, Ming-Hsiu; Ho, Yung-Han; Lai, Erh-Kun; Chiang, Kuang-Hao; Lung, Hsiang-Lan; Wang, Keh-Chung; Tseng, Tseung-Yuen; Lu, Chih-Yuan; 电子工程学系及电子研究所; Department of Electronics Engineering and Institute of Electronics
2016Excellent Resistance Variability Control of WOx ReRAM by a Smart Writing AlgorithmLin, Yu-Hsuan; Wu, Jau-Yi; Lee, Ming-Hsiu; Wang, Tien-Yen; Lin, Yu-Yu; Lee, Feng-Ming; Lee, Dai-Ying; Lai, Erh-Kun; Chiang, Kuang-Hao; Lung, Hsiang-Lan; Hsieh, Kuang-Yeu; Tseng, Tseung-Yuen; Lu, Chih-Yuan; 电子工程学系及电子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2019Performance Impacts of Analog ReRAM Non-ideality on Neuromorphic ComputingLin, Yu-Hsuan; Wang, Chao-Hung; Lee, Ming-Hsiu; Lee, Dai-Ying; Lin, Yu-Yu; Lee, Feng-Min; Lung, Hsiang-Lan; Wang, Keh-Chung; Tseng, Tseung-Yuen; Lu, Chih-Yuan; 电子工程学系及电子研究所; Department of Electronics Engineering and Institute of Electronics
一月-2017A Resistance Drift Compensation Scheme to Reduce MLC PCM Raw BER by Over 100x for Storage Class Memory ApplicationsKhwa, Win-San; Chang, Meng-Fan; Wu, Jau-Yi; Lee, Ming-Hsiu; Su, Tzu-Hsiang; Yang, Keng-Hao; Chen, Tien-Fu; Wang, Tien-Yen; Li, Hsiang-Pang; Brightsky, Matthew; Kim, Sangbum; Lung, Hsiang-Lan; Lam, Chung; 交大名义发表; National Chiao Tung University
一月-2017A Resistance Drift Compensation Scheme to Reduce MLC PCM Raw BER by Over 100x for Storage Class Memory ApplicationsKhwa, Win-San; Chang, Meng-Fan; Wu, Jau-Yi; Lee, Ming-Hsiu; Su, Tzu-Hsiang; Yang, Keng-Hao; Chen, Tien-Fu; Wang, Tien-Yen; Li, Hsiang-Pang; Brightsky, Matthew; Kim, Sangbum; Lung, Hsiang-Lan; Lam, Chung; 交大名义发表; National Chiao Tung University
显示 1 到 5 笔资料，总共 5 笔