1. You are Here：

Browsing by Author Ma, HC

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
or enter first few letters:  
Showing results 1 to 5 of 5
Issue DateTitleAuthor(s)
1-Sep-2005Excess low-frequency noise in ultrathin oxide n-MOSFETs arising from valence-band electron tunnelingWu, JW; You, JW; Ma, HC; Cheng, CC; Hsu, CF; Chang, CS; Huang, GW; Wang, TH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Investigation of post-NBTI stress recovery in pMOSFETs by direct measurement of single oxide charge de-trappingChan, CT; Ma, HC; Tang, CJ; Wang, TH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Low frequency noise degradation in ultra-thin oxide (I5A) analog n-MOSFETs resulting from valence-band tunnelingWu, JW; You, JW; Ma, HC; Cheng, CC; Hsu, C; Huang, GW; Chang, CS; Wang, T; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Single-electron emission of traps in HfSiON as high-k gate dielectric for MOSFETsChan, CT; Tang, CJ; Kuo, CH; Ma, HC; Tsai, CW; Wang, HCH; Chi, MH; Wang, T; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
22-Nov-2004Valence-band tunneling induced low frequency noise in ultrathin oxide (15 angstrom) n-type metal-oxide-semiconductor field effect transistorsWu, JW; You, JW; Ma, HC; Cheng, CC; Chang, CS; Huang, GW; Wang, T; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 5 of 5