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Showing results 1 to 19 of 19
Issue DateTitleAuthor(s)
1-May-2003Direct Patterning of low-k hydrogen silsesquioxane using X-ray exposure technologyChang, TC; Tsai, TM; Liu, PT; Mor, YS; Chen, CW; Sheu, JT; Tsengb, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2003Direct Patterning of low-k hydrogen silsesquioxane using X-ray exposure technology (vol 6, pg G69, 2003)Chang, TC; Tsai, TM; Liu, PT; Mor, YS; Chen, CW; Sheu, JT; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Nov-2001The effect of ammonia plasma treatment on low-k methyl-hybrido-silsesquioxane against photoresist stripping damageChang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Mei, YJ; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2002Effective repair to ultra-low-k dielectric material (k-2.0) by hexamethyidisilazane treatmentMor, YS; Chang, TC; Liu, PT; Tsai, TM; Chen, CW; Yan, ST; Chu, CJ; Wu, WF; Pan, FM; Lur, W; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-2002Effective strategy for porous organosilicate to suppress oxygen ashing damageLiu, PT; Chang, TC; Mor, YS; Chen, CW; Tsai, TM; Chu, CJ; Pan, FM; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-2001Effectiveness of NH3 plasma treatment in preventing wet stripper damage to low-k hydrogen silsesquioxane (HSQ)Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Mei, YJ; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-1999Effects of H-2 plasma treatment on low dielectric constant methylsilsesquioxaneChang, TC; Liu, PT; Mei, YJ; Mor, YS; Perng, TH; Yang, YL; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2002Eliminating dielectric degradation of low-k organosilicate glass by trimethylchlorosilane treatmentChang, TC; Liu, PT; Mor, YS; Tsai, TM; Chen, CW; Mei, YJ; Pan, FM; Wu, WF; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-1999Enhancing the oxygen plasma resistance of low-k methylsilsesquioxane by H-2 plasma treatmentLiu, PT; Chang, TC; Mor, YS; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Nov-2001Enhancing the resistance of low-k hydrogen silsesquioxane (HSQ) to wet stripper damageChang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Mei, YJ; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Nov-2001Improvement of low dielectric constant methylsilsesquioxane by boron implantation treatmentChang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Sze, SM; Mei, YJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Nov-2000Improvement of post-chemical mechanical planarization characteristics on organic low k methylsilsesquioxane as intermetal dielectricLiu, PT; Chang, TC; Huang, MC; Yang, YL; Mor, YS; Tsai, MS; Chung, H; Hou, J; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2003Moisture-induced material instability of porous organosilicate glassChang, TC; Chen, CW; Liu, PT; Mor, YS; Tsai, HM; Tsai, TM; Yan, ST; Tu, CH; Tseng, TY; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Oct-1999The novel improvement of low dielectric constant methylsilsesquioxane by N2O plasma treatmentChang, TC; Liu, PT; Mor, YS; Sze, SM; Yang, YL; Feng, MS; Pan, FM; Dai, BT; Chang, CY; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
2-Dec-2002The novel pattern method of low-k hybrid-organic-siloxane-polymer film using X-ray exposureChang, TC; Tsai, TM; Liu, PT; Mor, YS; Chen, CW; Mei, YJ; Sheu, JT; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Nov-1999The novel precleaning treatment for selective tungsten chemical vapor depositionChang, TC; Mor, YS; Liu, PT; Sze, SM; Yang, YL; Tsai, MS; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2002Preventing dielectric damage of low-k organic siloxane by passivation treatmentChang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Mei, YJ; Pan, FM; Wu, WF; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-2002Recovering dielectric loss of low dielectric constant organic siloxane during the photoresist removal processChang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Mei, YJ; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Oct-2002Trimethylchlorosilane treatment of ultralow dielectric constant material after photoresist removal processingChang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Chu, CJ; Pan, FM; Lur, W; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 19 of 19