瀏覽 的方式： 作者 Peng, CK
顯示 1 到 4 筆資料，總共 4 筆
| 公開日期 | 標題 | 作者 |
| 1-六月-1997 | Characteristics of nonalloyed pseudomorphic high electron mobility transistors using InAs/InxGa1-xAs (x=-> 0) AlyGa1-yAs (y=0 -> 0.3) contact structures | Chen, SS; Lin, CC; Lan, WH; Tu, SL; Peng, CK; 材料科學與工程學系; Department of Materials Science and Engineering |
| 1-六月-1997 | Characteristics of nonalloyed pseudomorphic high electron mobility transistors using InAs/InxGa1-xAs (x=-> 0) AlyGa1-yAs (y=0 -> 0.3) contact structures | Chen, SS; Lin, CC; Lan, WH; Tu, SL; Peng, CK; 材料科學與工程學系; Department of Materials Science and Engineering |
| 1-七月-1996 | High performance non-alloyed pseudomorphic high electron mobility transistors | Peng, CK; Lan, WH; Tu, SL; Yang, SJ; Chen, SS; Lin, CC; 材料科學與工程學系; Department of Materials Science and Engineering |
| 1-八月-2000 | Molecular beam epitaxy regrowth and device performance of GaAs-based pseudomorphic high electron mobility transistors using a thin indium passivation layer | Chen, SS; Lin, CC; Peng, CK; Chan, YJ; 材料科學與工程學系; Department of Materials Science and Engineering |
