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Showing results 1 to 15 of 15
Issue DateTitleAuthor(s)
1-Aug-2017Demonstrating antiphase domain boundary-free GaAs buffer layer on zero off-cut Si (001) substrate for interfacial misfit dislocation GaSb film by metalorganic chemical vapor depositionMinh Thien Huu Ha; Sa Hoang Huynh; Huy Binh Do; Tuan Anh Nguyen; Quang Ho Luc; Chang, Edward Yi; 材料科學與工程學系; 電機學院; 國際半導體學院; Department of Materials Science and Engineering; College of Electrical and Computer Engineering; International College of Semiconductor Technology
Aug-2016Effects of In-Situ Plasma-Enhanced Atomic Layer Deposition Treatment on the Performance of HfO2/In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect TransistorsQuang Ho Luc; Cheng, Shou Po; Chang, Po Chun; Huy Binh Do; Chen, Jin Han; Minh Thien Huu Ha; Sa Hoang Huynh; Hu, Chenming Calvin; Lin, Yueh Chin; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-May-2013Electrical Characteristics of Al2O3/InSb MOSCAPs and the Effect of Postdeposition Annealing TemperaturesHai Dang Trinh; Lin, Yueh Chin; Chang, Edward Yi; Lee, Ching-Ting; Wang, Shin-Yuan; Hong Quan Nguyen; Chiu, Yu Sheng; Quang Ho Luc; Chang, Hui-Chen; Lin, Chun-Hsiung; Jang, Simon; Diaz, Carlos H.; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-Aug-2014Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation LayerQuang Ho Luc; Chang, Edward Yi; Hai Dang Trinh; Lin, Yueh Chin; Hong Quan Nguyen; Wong, Yuen Yee; Huy Binh Do; Salahuddin, Sayeef; Hu, Chenming Calvin; 材料科學與工程學系; 電機學院; Department of Materials Science and Engineering; College of Electrical and Computer Engineering
2016Enhancement-mode AlGaN/GaN MIS-HEMTs with Low Threshold Voltage Hysteresis Using Damage-free Neutral Beam Etched Gate RecessLin, Yen-Ku; Noda, Shuichi; Lee, Ruey-Bor; Huang, Chia-Ching; Quang Ho Luc; Samukawa, Seiji; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 影像與生醫光電研究所; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Institute of Photonic System; Institute of Imaging and Biomedical Photonics; Department of Electronics Engineering and Institute of Electronics
1-May-2018Entirely relaxed lattice-mismatched GaSb/GaAs/Si(001) heterostructure grown via metalorganic chemical vapor depositionMinh Thien Huu Ha; Sa Hoang Huynh; Huy Binh Do; Tuan Anh Nguyen; Quang Ho Luc; Lee, Ching Ting; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-Jan-2012The Growth and Fabrication of High-Performance In0.5Ga0.5As Metal-Oxide-Semiconductor Capacitor on GaAs Substrate by Metalorganic Chemical Vapor Deposition Method.Hong Quan Nguyen; Hai Dang Trinh; Yu, Hung Wei; Hsu, Ching Hsiang; Chung, Chen Chen; Binh Tinh Tran; Wong, Yuen Yee; Thanh Hoa Phan Van; Quang Ho Luc; Chiou, Diao Yuan; Chi Lang Nguyen; Dee, Chang Fu; Chang, Edward Yi; 材料科學與工程學系; Department of Materials Science and Engineering
1-Jun-2017High-Performance GaN MOSHEMTs Fabricated With ALD Al2O3 Dielectric and NBE Gate Recess Technology for High Frequency Power ApplicationsLin, Yen-Ku; Noda, Shuichi; Huang, Chia-Ching; Lo, Hsiao-Chieh; Wu, Chia-Hsun; Quang Ho Luc; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 影像與生醫光電研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Institute of Imaging and Biomedical Photonics; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-Dec-2015Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-StackHuy Binh Do; Quang Ho Luc; Minh Thien Huu Ha; Hu, Chenming Calvin; Lin, Yueh Chin; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
5-Sep-2016Impact of interfacial misfit dislocation growth mode on highly lattice-mismatched InxGa1-xSb epilayer grown on GaAs substrate by metalorganic chemical vapor depositionHuynh, Sa Hoang; Minh Thien Huu Ha; Huy Binh Do; Quang Ho Luc; Yu, Hung Wei; Chang, Edward Yi; 材料科學與工程學系; 電機學院; Department of Materials Science and Engineering; College of Electrical and Computer Engineering
1-May-2017Investigation of Mo/Ti/AlN/HfO2 High-k Metal Gate Stack for Low Power Consumption InGaAs NMOS Device ApplicationHuy Binh Do; Quang Ho Luc; Minh Thien Huu Ha; Sa Hoang Huynh; Tuan Anh Nguyen; Hu, Chenming; Lin, Yueh Chin; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
9-Jan-2017Materials growth and band offset determination of Al2O3/In0.15Ga0.85Sb/GaSb/GaAs heterostructure grown by metalorganic chemical vapor depositionSa Hoang Huynh; Minh Thien Huu Ha; Huy Binh Do; Tuan Anh Nguyen; Quang Ho Luc; Chang, Edward Yi; 材料科學與工程學系; 電機學院; 國際半導體學院; Department of Materials Science and Engineering; College of Electrical and Computer Engineering; International College of Semiconductor Technology
Sep-2016Methods for Extracting Flat Band Voltage in the InGaAs High Mobility MaterialsHuy Binh Do; Quang Ho Luc; Minh Thien Huu Ha; Sa Hoang Huynh; Hu, Chenming; Lin, Yueh Chin; Chang, Edward Yi; 材料科學與工程學系; 電機學院; Department of Materials Science and Engineering; College of Electrical and Computer Engineering
1-Apr-2018Nonlinear dependence of X-ray diffraction peak broadening in InxGa1-xSb epitaxial layers on GaAs substratesSa Hoang Huynh; Minh Thien Huu Ha; Huy Binh Do; Tuan Anh Nguyen; Quang Ho Luc; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-Jan-2018Normally-OFF GaN MIS-HEMT With F- Doped Gate Insulator Using Standard Ion ImplantationWu, Chia-Hsun; Han, Ping-Cheng; Quang Ho Luc; Hsu, Ching-Yi; Hsieh, Ting-En; Wang, Huan-Chung; Lin, Yen-Ku; Chang, Po-Chun; Lin, Yueh-Chin; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
Showing results 1 to 15 of 15