瀏覽 的方式： 作者 SU, HP
顯示 1 到 8 筆資料，總共 8 筆
| 公開日期 | 標題 | 作者 |
| 1-二月-1995 | ELECTRICAL CHARACTERISTICS OF THIN-FILM TRANSISTORS WITH DOUBLE-ACTIVE-LAYER STRUCTURE | TSAI, MJ; WANG, PW; SU, HP; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-四月-1995 | HIGH-PERFORMANCE NITRIDED OXIDES FABRICATED BY VERY-LOW-PRESSURE NITRIDATION TECHNIQUE | SU, HP; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-四月-1995 | HIGH-PERFORMANCE SUPERTHIN OXIDE/NITRIDE/OXIDE STACKED DIELECTRICS FORMED BY LOW-PRESSURE OXIDATION OF ULTRATHIN NITRIDE | LIU, HW; SU, HP; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-一月-1994 | A NEW PORTRAYAL OF OXIDATION OF UNDOPED POLYCRYSTALLINE SILICON FILMS IN A SHORT-DURATION | WANG, PW; SU, HP; TSAI, MJ; HONG, G; FENG, MS; CHENG, HC; 奈米中心; Nano Facility Center |
| 1-六月-1995 | NOVEL TUNNELING DIELECTRIC PREPARED BY OXIDATION OF ULTRATHIN RUGGED POLYSILICON FOR 5-V-ONLY NONVOLATILE MEMORIES | SU, HP; LIU, HW; WANG, PW; CHENG, PW; JEN, IM; HONG, G; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-十一月-1995 | SUPERIOR LOW-PRESSURE-OXIDIZED SI3N4 FILMS ON RAPID-THERMAL-NITRIDED POLY-SI FOR HIGH-DENSITY DRAMS | CHANG, HC; LIU, HW; SU, HP; HONG, G; 奈米中心; Nano Facility Center |
| 1-十一月-1995 | SUPERIOR LOW-PRESSURE-OXIDIZED SI3N4 FILMS ON RAPID-THERMAL-NITRIDED POLY-SI FOR HIGH-DENSITY DRAMS | CHANG, HC; LIU, HW; SU, HP; HONG, G; 奈米中心; Nano Facility Center |
| 1-十一月-1994 | SUPERTHIN O/N/O STACKED DIELECTRICS FORMED BY OXIDIZING THIN NITRIDES IN LOW-PRESSURE OXYGEN FOR HIGH-DENSITY MEMORY DEVICES | SU, HP; LIU, HW; HONG, G; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
