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Showing results 1 to 5 of 5
Issue DateTitleAuthor(s)
24-May-2018Deep-Ultraviolet Hyperbolic Metacavity LaserShen, Kun-Ching; Ku, Chen-Ta; Hsieh, Chiieh; Kuo, Hao-Chung; Cheng, Yuh-Jen; Tsai, Din Ping; 光電工程學系; Department of Photonics
1-Jan-2019Enhanced Radiative Emission of MQW by Resonant Modes of Hyperbolic Metamaterial ResonatorShen, Kun-Ching; Hsu, Lung-Hsing; Tsai, Din Ping; Kuo, Hao-Chung; Lin, Chien-Chung; Cheng, Yuh-Jen; 光電系統研究所; 光電工程學系; 光電工程研究所; Institute of Photonic System; Department of Photonics; Institute of EO Enginerring
1-May-2014High-Efficiency and Crack-Free InGaN-Based LEDs on a 6-inch Si (111) Substrate With a Composite Buffer Layer Structure and Quaternary Superlattices Electron-Blocking LayersLi, Zhen-Yu; Lee, Chia-Yu; Lin, Da-Wei; Lin, Bing-Cheng; Shen, Kun-Ching; Chiu, Ching-Hsueh; Tu, Po-Min; Kuo, Hao-Chung; Uen, Wu-Yih; Horng, Ray-Hua; Chi, Gou-Chung; Chang, Chun-Yen; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
1-Jan-2012Improved performance of 375 nm InGaN/AlGaN light-emitting diodes by incorporating a heavily Si-doped transition layerHuang, Shih-Cheng; Shen, Kun-Ching; Tu, Po-Min; Wuu, Dong-Sing; Kuo, Hao-Chung; Horng, Ray-Hua; 光電工程學系; Department of Photonics
15-Dec-2011Study of 375 nm ultraviolet InGaN/AlGaN light-emitting diodes with heavily Si-doped GaN transition layer in growth mode, internal quantum efficiency, and device performanceHuang, Shih-Cheng; Shen, Kun-Ching; Wuu, Dong-Sing; Tu, Po-Min; Kuo, Hao-Chung; Tu, Chia-Cheng; Horng, Ray-Hua; 光電工程學系; Department of Photonics
Showing results 1 to 5 of 5