瀏覽 的方式： 作者 Shie, B. S.
顯示 1 到 4 筆資料，總共 4 筆
| 公開日期 | 標題 | 作者 |
| 1-十一月-2010 | Gate-First TaN/La(2)O(3)/SiO(2)/Ge n-MOSFETs Using Laser Annealing | Chen, W. B.; Wu, C. H.; Shie, B. S.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-Nov-2010 | Gate-First TaN/La2O3/SiO2/Ge n-MOSFETs Using Laser Annealing | Chen, W. B.; Wu, C. H.; Shie, B. S.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-Apr-2011 | Higher Gate Capacitance Ge n-MOSFETs Using Laser Annealing | Chen, W. B.; Shie, B. S.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 2010 | Higher kappa Metal-Gate/High-kappa/Ge n-MOSFETs with < 1 nm EOT Using Laser Annealing | Chen, W. B.; Shie, B. S.; Chin, Albert; Hsu, K. C.; Chi, C. C.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
