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Showing results 1 to 5 of 5
Issue DateTitleAuthor(s)
15-Mar-1998Arsenic precipitate accumulation in alternately Si/Be delta-doped GaAs grown by low-temperature molecular beam epitaxyHsieh, LZ; Huang, JH; Su, ZA; Wu, MC; 電子物理學系; Department of Electrophysics
1-May-1998Formation of two-dimensional arsenic precipitation in superlattice structures of alternately undoped and heavily Be doped GaAs with varying periods grown by low-temperature molecular beam epitaxySu, ZA; Huang, JH; Lee, WI; 電子物理學系; Department of Electrophysics
1-Nov-1997The microstructure of As precipitates in Si delta-doped GaAs grown by low-temperature molecular beam epitaxyHsieh, LZ; Huang, JH; Su, ZA; Guo, XJ; Shih, HC; Wu, MCY; 電子物理學系; Department of Electrophysics
1-Nov-1997The microstructure of As precipitates in Si delta-doped GaAs grown by low-temperature molecular beam epitaxyHsieh, LZ; Huang, JH; Su, ZA; Guo, XJ; Shih, HC; Wu, MCY; 電子物理學系; Department of Electrophysics
20-Apr-1998Two-dimensional arsenic precipitation in superlattice structures of alternately undoped and heavily Be-doped GaAs grown by low-temperature molecular beam epitaxySu, ZA; Huang, JH; Hsieh, LZ; Lee, WI; 電子物理學系; Department of Electrophysics
Showing results 1 to 5 of 5