瀏覽 的方式： 作者 Su, ZA
顯示 1 到 5 筆資料，總共 5 筆
| 公開日期 | 標題 | 作者 |
| 15-三月-1998 | Arsenic precipitate accumulation in alternately Si/Be delta-doped GaAs grown by low-temperature molecular beam epitaxy | Hsieh, LZ; Huang, JH; Su, ZA; Wu, MC; 電子物理學系; Department of Electrophysics |
| 1-五月-1998 | Formation of two-dimensional arsenic precipitation in superlattice structures of alternately undoped and heavily Be doped GaAs with varying periods grown by low-temperature molecular beam epitaxy | Su, ZA; Huang, JH; Lee, WI; 電子物理學系; Department of Electrophysics |
| 1-十一月-1997 | The microstructure of As precipitates in Si delta-doped GaAs grown by low-temperature molecular beam epitaxy | Hsieh, LZ; Huang, JH; Su, ZA; Guo, XJ; Shih, HC; Wu, MCY; 電子物理學系; Department of Electrophysics |
| 1-十一月-1997 | The microstructure of As precipitates in Si delta-doped GaAs grown by low-temperature molecular beam epitaxy | Hsieh, LZ; Huang, JH; Su, ZA; Guo, XJ; Shih, HC; Wu, MCY; 電子物理學系; Department of Electrophysics |
| 20-四月-1998 | Two-dimensional arsenic precipitation in superlattice structures of alternately undoped and heavily Be-doped GaAs grown by low-temperature molecular beam epitaxy | Su, ZA; Huang, JH; Hsieh, LZ; Lee, WI; 電子物理學系; Department of Electrophysics |
