瀏覽 的方式： 作者 Susanto, Iwan
顯示 1 到 2 筆資料，總共 2 筆
| 公開日期 | 標題 | 作者 |
| 5-七月-2017 | Effects of N/Ga flux ratio on GaN films grown on 4H-SiC substrate with 4 degrees miscutting orientation by plasma-assisted molecular beam epitaxy | Susanto, Iwan; Tsou, Tsung-Han; Yang, Zu-Po; Lee, Chao-Yu; Li, Hui; Yu, Ing-Song; 光電系統研究所; Institute of Photonic System |
| 1-十二月-2019 | The influence of 2D MoS2 layers on the growth of GaN films by plasma-assisted molecular beam epitaxy | Susanto, Iwan; Tsai, Chi-Yu; Fachruddin; Rahmiati, Tia; Ho, Yen-Ten; Tsai, Ping-Yu; Yu, Ing-Song; 國際半導體學院; International College of Semiconductor Technology |
