| 公開日期 | 標題 | 作者 |
| 1-九月-1992 | CONTACT RESISTIVITY OF SHALLOW JUNCTIONS FORMED BY IMPLANTATION THROUGH PT OR PTSI | TSUI, BY; CHEN, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-四月-1993 | DIELECTRIC DEGRADATION OF PT/SIO2/SI STRUCTURES DURING THERMAL ANNEALING | TSUI, BY; CHEN, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-一月-1993 | EFFECT OF FLUORINE INCORPORATION ON THE THERMAL-STABILITY OF PTSI/SI STRUCTURE | TSUI, BY; TSAI, JY; WU, TS; CHEN, MC; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics |
| 1-九月-1990 | FORMATION AND CHARACTERIZATION OF A PTSI CONTACTED N+P SHALLOW JUNCTION | TSUI, BY; CHEN, MC; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering |
| 1-四月-1990 | FORMATION OF 0.1-MU-M N+ P JUNCTION BY AS+ IMPLANTATION THROUGH PT OR PTSI FILM | TSUI, BY; CHEN, MC; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering |
| 15-四月-1991 | FORMATION OF PTSI-CONTACTED P+N SHALLOW JUNCTIONS BY BF2+ IMPLANTATION AND LOW-TEMPERATURE FURNACE ANNEALING | TSUI, BY; TSAI, JY; CHEN, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-四月-1990 | HIGH-TEMPERATURE STABILITY OF PLATINUM SILICIDE ASSOCIATED WITH FLUORINE IMPLANTATION | TSAI, JY; TSUI, BY; CHEN, MC; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering |
| 15-十二月-1990 | LOW-TEMPERATURE REACTION OF THIN-FILM PLATINUM (LESS-THAN-OR-EQUAL-TO-300A) WITH (100) SILICON | TSUI, BY; CHEN, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-五月-1989 | A NOVEL PROCESS FOR HIGH-PERFORMANCE SCHOTTKY-BARRIER PMOS | TSUI, BY; CHEN, MC; 電控工程研究所; Institute of Electrical and Control Engineering |
| 1-三月-1988 | A NOVEL PROCESS FOR HIGH-PERFORMANCE SCHOTTKY-BARRIER PMOS | TSUI, BY; CHEN, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-八月-1994 | ROLE OF FLUORINE-ATOMS ON THE THERMAL-STABILITY OF THE SILICIDE SILICON STRUCTURE | TSUI, BY; CHEN, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-一月-1993 | SERIES RESISTANCE OF SELF-ALIGNED SILICIDED SOURCE DRAIN STRUCTURE | TSUI, BY; CHEN, MC; 電子工程學系及電子研究所; 電控工程研究所; Department of Electronics Engineering and Institute of Electronics; Institute of Electrical and Control Engineering |
