瀏覽 的方式： 作者 Tang, DD
顯示 1 到 4 筆資料，總共 4 筆
| 公開日期 | 標題 | 作者 |
| 2005 | The impact of uniaxial strain engineering on channel backscattering in nanoscale MOSFETs | Lin, HN; Chen, HW; Ko, CH; Ge, CH; Lin, HC; Huang, TY; Lee, WC; Tang, DD; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-五月-2006 | A novel transient characterization technique to investigate trap properties in HfSiON gate dielectric MOSFETs - From single electron emission to PBTI recovery transient | Wang, TH; Chan, CT; Tang, CJ; Tsai, CW; Wang, HCH; Chi, MH; Tang, DD; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 2005 | Positive bias and temperature stress induced two-stage drain current degradation in HfSiON nMOSFET's | Chan, CT; Tang, CJ; Wang, T; Wang, HCH; Tang, DD; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 2004 | Study of annealing and exchange bias effects in PtMn based magnetic tunnel junction system | Peng, TY; Yao, YD; Chen, SY; Wang, YH; Chen, WC; Gao, MJ; Tang, DD; 材料科學與工程學系; Department of Materials Science and Engineering |
