1. You are Here：

Browsing by Author Trinh, H. D.

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
or enter first few letters:  
Showing results 1 to 7 of 7
Issue DateTitleAuthor(s)
1-Jun-2011Electrical Characterization of Al(2)O(3)/n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface TreatmentsTrinh, H. D.; Brammertz, G.; Chang, E. Y.; Kuo, C. I.; Lu, C. Y.; Lin, Y. C.; Nguyen, H. Q.; Wong, Y. Y.; Tran, B. T.; Kakushima, K.; Iwai, H.; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-Jun-2011Electrical Characterization of Al2O3/n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface TreatmentsTrinh, H. D.; Brammertz, G.; Chang, E. Y.; Kuo, C. I.; Lu, C. Y.; Lin, Y. C.; Nguyen, H. Q.; Wong, Y. Y.; Tran, B. T.; Kakushima, K.; Iwai, H.; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-Jan-2011Experimental and modeling on atomic layer deposition Al2O3/n-InAs metal-oxide-semiconductor capacitors with various surface treatmentsTrinh, H. D.; Chang, E. Y.; Brammertz, G.; Lu, C. Y.; Nguyen, H. Q.; Tran, B. T.; 材料科學與工程學系; Department of Materials Science and Engineering
1-Jan-2011Experimental and modeling on atomic layer deposition Al2O3/n-InAs metal-oxide-semiconductor capacitors with various surface treatmentsTrinh, H. D.; Chang, E. Y.; Brammertz, G.; Lu, C. Y.; Nguyen, H. Q.; Tran, B. T.; 材料科學與工程學系; Department of Materials Science and Engineering
1-Jan-2013In0.5Ga0.5As-Based Metal-Oxide-Semiconductor Capacitor on GaAs Substrate Using Metal-Organic Chemical Vapor DepositionNguyen, H. Q.; Trinh, H. D.; Chang, E. Y.; Lee, C. T.; Wang, Shin Yuan; Yu, H. W.; Hsu, C. H.; Nguyen, C. L.; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
26-Jul-2010The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al(2)O(3)/n-In(0.53)Ga(0.47)As metal-oxide-semiconductor capacitorTrinh, H. D.; Chang, E. Y.; Wu, P. W.; Wong, Y. Y.; Chang, C. T.; Hsieh, Y. F.; Yu, C. C.; Nguyen, H. Q.; Lin, Y. C.; Lin, K. L.; Hudait, M. K.; 材料科學與工程學系; Department of Materials Science and Engineering
26-Jul-2010The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitorTrinh, H. D.; Chang, E. Y.; Wu, P. W.; Wong, Y. Y.; Chang, C. T.; Hsieh, Y. F.; Yu, C. C.; Nguyen, H. Q.; Lin, Y. C.; Lin, K. L.; Hudait, M. K.; 材料科學與工程學系; Department of Materials Science and Engineering
Showing results 1 to 7 of 7