| Issue Date | Title | Author(s) |
| 1-Apr-1999 | Deuterium effect on stress-induced leakage current | Lin, BC; Cheng, YC; Chin, A; Wang, T; Tsai, C; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 25-Jan-1999 | The effect of native oxide on epitaxial SiGe from deposited amorphous Ge on Si | Wu, YH; Chen, WJ; Chin, A; Tsai, C; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-May-1999 | Electrical characterization of Al2O3 on Si from thermally oxidized AlAs and Al | Liao, CC; Chin, A; Tsai, C; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-May-1999 | Improved electrical characteristics of CoSi2 using HF-vapor pretreatment | Wu, YH; Chen, WJ; Chang, SL; Chin, A; Gwo, S; Tsai, C; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-Jul-1999 | Improved electrical characteristics of CoSi2 using HF-vapor pretreatment | Wu, YH; Chen, WJ; Chang, SL; Chin, A; Gwo, S; Tsai, C; 物理研究所; 電子工程學系及電子研究所; Institute of Physics; Department of Electronics Engineering and Institute of Electronics |
| 1-May-1999 | Improved electrical characteristics of CoSi2 using HF-vapor pretreatment | Wu, YH; Chen, WJ; Chang, SL; Chin, A; Gwo, S; Tsai, C; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-Apr-1997 | In0.52Al0.48As/InAs/InxAl1-xAs pseudomorphic HEMT's on InP | Chin, A; Liao, CC; Tsai, C; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-Jun-1999 | The leakage current effect of thin gate oxides (2.4-2.7 nm) with in situ native oxide desorption | Lai, JM; Chieng, WH; Lin, BC; Chin, A; Tsai, C; 機械工程學系; 電子工程學系及電子研究所; Department of Mechanical Engineering; Department of Electronics Engineering and Institute of Electronics |
| 1998 | Mobility and oxide breakdown behavior in ultra-this oxide with atomically smooth interface | Cheng, YC; Chen, WJ; Lin, BC; Tsai, C; Chin, A; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-Sep-1997 | Thin oxides with in situ native oxide removal | Chin, A; Chen, WJ; Chang, T; Kao, RH; Lin, BC; Tsai, C; Huang, JCM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-Sep-1997 | Thin oxides with in situ native oxide removal | Chin, A; Chen, WJ; Chang, T; Kao, RH; Lin, BC; Tsai, C; Huang, JCM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1995 | Ultra-thin oxide with atomically smooth interfaces | Chin, A; Chen, WJ; Kao, RH; Lin, BC; Chang, T; Tsai, C; Huang, JCM; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics |
| 1-May-1997 | Ultrathin N2O-oxide with atomically flat interfaces | Chin, A; Chen, WJ; Lin, BC; Kao, JH; Tsai, C; Huang, JCM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-May-1997 | Ultrathin N2O-oxide with atomically flat interfaces | Chin, A; Chen, WJ; Lin, BC; Kao, JH; Tsai, C; Huang, JCM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
