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| Issue Date | Title | Author(s) |
| 1-May-2001 | Beryllium-implanted P-type GaN with high carrier concentration | Yu, CC; Chu, CF; Tsai, JY; Lin, CF; Lan, WH; Chiang, CI; Wang, SC; 光電工程學系; Department of Photonics |
| 25-Feb-2004 | Comparisons of InP/InGaAlAs and InAlAs/InGaAlAs distributed Bragg reflectors grown by metalorganic chemical vapor deposition | Lu, TC; Tsai, JY; Kuo, HC; Wang, SC; 光電工程學系; Department of Photonics |
| 25-Mar-2004 | Effect of rapid thermal annealing on beryllium implanted p-type GaN | Huang, HW; Kao, CC; Tsai, JY; Yu, CC; Chu, CF; Lee, JY; Kuo, SY; Lin, CF; Kuo, HC; Wang, SC; 光電工程學系; Department of Photonics |
| 1-Jun-1996 | Effects of gas ratio on electrical properties of electron-cyclotron-resonance nitride films grown at room temperature | Chang, KM; Tsai, JY; Li, CH; Yeh, TH; Wang, SW; Yang, JY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-Jun-1996 | Effects of gas ratio on electrical properties of electron-cyclotron-resonance nitride films grown at room temperature | Chang, KM; Tsai, JY; Li, CH; Yeh, TH; Wang, SW; Yang, JY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 15-Aug-2002 | Electrical and optical properties of beryllium-implanted Mg-doped GaN | Yu, CC; Chu, CF; Tsai, JY; Lin, CF; Wang, SC; 光電工程學系; Department of Photonics |
| 1-Oct-2005 | Electronic structure and transport properties of La0.7Ce0.3MnO3 | Chang, WJ; Tsai, JY; Jeng, HT; Lin, JY; Zhang, KYJ; Liu, HL; Lee, JM; Chen, JM; Wu, KH; Uen, TM; Gou, YS; Juang, JY; 電子物理學系; 物理研究所; Department of Electrophysics; Institute of Physics |
| 1-Mar-2006 | Enhanced light output in InGaN-based light-emitting diodes with onmidirectional one-dimensional photonic crystals | Lin, CH; Tsai, JY; Kao, CC; Kuo, HC; Yu, CC; Lo, JR; Leung, KM; 光電工程學系; Department of Photonics |
| 22-Aug-2005 | Fabrication and performance of blue GaN-based vertical-cavity surface emitting laser employing AlN/GaN and Ta2O5/SiO2 distributed Bragg reflector | Kao, CC; Peng, YC; Yao, HH; Tsai, JY; Chang, YH; Chu, JT; Huang, HW; Kao, TT; Lu, TC; Kuo, HC; Wang, SC; Lin, CF; 光電工程學系; Department of Photonics |
| 15-Aug-2002 | Gallium nitride nanorods fabricated by inductively coupled plasma reactive ion etching | Yu, CC; Chu, CF; Tsai, JY; Huang, HW; Hsueh, TH; Lin, CF; Wang, SC; 光電工程學系; Department of Photonics |
| 1-Oct-2003 | High reflectivity distributed Bragg reflectors for 1.55 mu m VCSELs using InP/airgap | Tsai, JY; Lu, TC; Wang, SC; 光電工程學系; Department of Photonics |
| 1-Jan-1997 | The influence of precleaning process on the gate oxide film fabricated by electron cyclotron resonance plasma oxidation | Chang, KM; Li, CH; Fahn, FJ; Tsai, JY; Yeh, TH; Wang, SW; Yang, JY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-Apr-2003 | InP/InGaAlAs distributed Bragg reflectors grown by low-pressure metal organic chemical vapor deposition | Lu, TC; Tsai, JY; Chu, JT; Chang, YS; Wang, SC; 光電工程學系; Department of Photonics |
| 22-May-2001 | Investigation of beryllium implanted P-type GaN | Yu, CC; Chu, CF; Tsai, JY; Wang, SC; 光電工程學系; Department of Photonics |
| 1-Mar-2006 | The lasing characteristics of GaN-based vertical-cavity surface-emitting laser with AlN-GaN and Ta2O5-SiO2 distributed Bragg reflectors | Kao, CC; Lu, TC; Huang, HW; Chu, JT; Peng, YC; Yao, HH; Tsai, JY; Kao, TT; Kuo, HC; Wang, SC; Lin, CF; 光電工程學系; Department of Photonics |
| 20-Nov-2000 | Low-resistance ohmic contacts on p-type GaN using Ni/Pd/Au metallization | Chu, CF; Yu, CC; Wang, YK; Tsai, JY; Lai, FI; Wang, SC; 光電工程學系; Department of Photonics |
| 1995 | Reactive ion etching of compound semiconductors grown by MOCVD technique with BCl3/SF6/Ar mixtures | Chang, KM; Tsai, JY; Yeh, CB; Yeh, TH; Wang, SW; Jou, MJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-Jul-2000 | Reactive ion pretreatment technique to improve the ashing resistance of low dielectric constant high carbon content polymer | Chang, KM; Yang, JY; Chang, YH; Tsai, JY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-Dec-1996 | Reduction of selectivity loss probability on dielectric surface during chemical vapor deposition of tungsten using fluorinated oxide and removing silanol units on dielectric surface | Chang, KM; Wang, SW; Li, CH; Tsai, JY; Yeh, TH; 奈米中心; Nano Facility Center |
| 1-Apr-2006 | Room-temperature operation of optically pumped blue-violet GaN-based vertical-cavity surface-emitting lasers fabricated by laser lift-off | Chu, JT; Lu, TC; Yao, HH; Kao, CC; Liang, WD; Tsai, JY; Kuo, HC; Wang, SC; 光電工程學系; Department of Photonics |
