| 公開日期 | 標題 | 作者 |
| 15-十一月-2003 | The application of electrochemical metrologies for investigating chemical mechanical polishing of Al with a Ti barrier layer | Chiu, SY; Wang, YL; Liu, CP; Lan, JK; Ay, C; Feng, MS; Tsai, MS; Dai, BT; 材料科學與工程學系; Department of Materials Science and Engineering |
| - | Chemical mechanical polishing for selective CVD-W | Wang, MT; Yeh, WK; Tsai, MS; Tseng, WT; Chang, TC; Chen, LJ; Chen, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| - | Chemical mechanical polishing for selective CVD-W | Wang, MT; Yeh, WK; Tsai, MS; Tseng, WT; Chang, TC; Chen, LJ; Chen, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 30-十月-1997 | Chemical mechanical polishing for selective CVD-W | Wang, MT; Yeh, WK; Tsai, MS; Tseng, WT; Chang, TC; Chen, LJ; Chen, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 30-十月-1997 | Chemical mechanical polishing for selective CVD-W | Wang, MT; Yeh, WK; Tsai, MS; Tseng, WT; Chang, TC; Chen, LJ; Chen, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-三月-1997 | Chemical-mechanical polishing and material characteristics of plasma-enhanced chemically vapor deposited fluorinated oxide thin films | Tseng, WT; Hsieh, YT; Lin, CF; Tsai, MS; Feng, MS; 材料科學與工程學系; 奈米中心; Department of Materials Science and Engineering; Nano Facility Center |
| 31-十月-1997 | Chemical-mechanical polishing of low-dielectric-constant spin-on-glasses: film chemistries, slurry formulation and polish selectivity | Wang, YL; Liu, C; Chang, ST; Tsai, MS; Feng, MS; Tseng, WT; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics |
| 1-八月-1998 | Conduction mechanism and temperature-dependent current-voltage in (Ba, Sr)TiO3 thin films | Tsai, MS; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 21-五月-2000 | Dielectric relaxation and defect analysis of Ta2O5 thin films | Ezhilvalavan, S; Tsai, MS; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-二月-1999 | Effect of bottom electrode materials and annealing treatments on the electrical characteristics of Ba0.47Sr0.53TiO3 film capacitors | Tsai, MS; Sun, SC; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-九月-1999 | Effect of bottom electrode materials on the electrical and reliability characteristics of (Ba, Sr)TiO3 capacitors | Tsai, MS; Sun, SC; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-十一月-1998 | Effect of bottom electrodes on dielectric relaxation and defect analysis of (Ba0.47Sr0.53)TiO3 thin film capacitors | Tsai, MS; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-十一月-1998 | Effect of bottom electrodes on dielectric relaxation and defect analysis of (Ba0.47Sr0.53)TiO3 thin film capacitors | Tsai, MS; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-三月-2000 | Effect of bottom electrodes on resistance degradation and breakdown of (Ba, Sr)TiO3 thin films | Tsai, MS; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 7-九月-1999 | Effect of oxygen to argon ratio on defects and electrical conductivities in Ba0.47Sr0.53TiO3 thin-film capacitors | Tsai, MS; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-十月-1997 | Effect of oxygen to argon ratio on properties of (Ba,Sr)TiO3 thin films prepared by radio-frequency magnetron sputtering | Tsai, MS; Sun, SC; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 22-八月-2000 | The effect of oxygen-to-argon ratio on the electrical and reliability characteristics of sputtered Sr0.8Bi2.5Ta1.2Nb0.9O9+x thin films | Tsai, MS; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 2006 | Effect of surface passivation removal on planarization efficiency in Cu abrasive-free polishing | Fang, JY; Tsai, MS; Dai, BT; Wu, YS; Feng, MS; 材料科學與工程學系; Department of Materials Science and Engineering |
| 31-十月-1997 | Effects of corrosion environments on the surface finishing of copper chemical mechanical polishing | Wang, MT; Tsai, MS; Liu, C; Tseng, WT; Chang, TC; Chen, LJ; Cheng, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-一月-1998 | Electrical properties of O-2 and N-2 annealed (Ba,Sr)TiO3 thin films | Tsai, MS; Sun, SC; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
