| Issue Date | Title | Author(s) |
| 11-Sep-2017 | Effect of barrier layer on switching polarity of ZrO2-based conducting-bridge random access memory | Chandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Tsai, Tsung-Ling; Lin, Chun-An; Tseng, Tseung-Yuen; 資訊工程學系; 電子工程學系及電子研究所; Department of Computer Science; Department of Electronics Engineering and Institute of Electronics |
| Oct-2016 | Enhanced Properties in Conductive-Bridge Resistive Switching Memory With Oxide-Nitride Bilayer Structure | Tsai, Tsung-Ling; Jiang, Fa-Shen; Ho, Chia-Hua; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 20-Jul-2015 | Enhanced switching uniformity in AZO/ZnO1-x/ITO transparent resistive memory devices by bipolar double forming | Simanjuntak, Firman Mangasa; Panda, Debashis; Tsai, Tsung-Ling; Lin, Chun-An; Wei, Kung-Hwa; Tseng, Tseung-Yuen; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics |
| 1-Nov-2015 | Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode | Simanjuntak, Firman Mangasa; Panda, Debashis; Tsai, Tsung-Ling; Lin, Chun-An; Wei, Kung-Hwa; Tseng, Tseung-Yuen; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics |
| 27-Jan-2014 | Forming-free bipolar resistive switching in nonstoichiometric ceria films | Ismail, Muhammad; Huang, Chun-Yang; Panda, Debashis; Hung, Chung-Jung; Tsai, Tsung-Ling; Jieng, Jheng-Hong; Lin, Chun-An; Chand, Umesh; Rana, Anwar Manzoor; Ahmed, Ejaz; Talib, Ijaz; Nadeem, Muhammad Younus; Tseng, Tseung-Yuen; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics |
| 11-四月-2016 | A high performance transparent resistive switching memory made from ZrO2/AlON bilayer structure | Tsai, Tsung-Ling; Chang, Hsiang-Yu; Lou, Jesse Jen-Chung; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-十一月-2015 | Impact of Post-Oxide Deposition Annealing on Resistive Switching in HfO2-Based Oxide RRAM and Conductive-Bridge RAM Devices | Tsai, Tsung-Ling; Chang, Hsiang-Yu; Jiang, Fa-Shen; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 2-五月-2016 | Impacts of Co doping on ZnO transparent switching memory device characteristics | Simanjuntak, Firman Mangasa; Prasad, Om Kumar; Panda, Debashis; Lin, Chun-An; Tsai, Tsung-Ling; Wei, Kung-Hwa; Tseng, Tseung-Yuen; 材料科學與工程學系; 資訊工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Computer Science; Department of Electronics Engineering and Institute of Electronics |
| 1-Jan-2014 | Resistive Switching and Rectification Characteristics with CoO/ZrO2 Double Layers | Tsai, Tsung-Ling; Wu, Jia-Woei; Tseng, Tseng-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-Jun-2014 | Resistive switching characteristics of Pt/CeOx/TiN memory device | Ismail, Muhammad; Talib, Ijaz; Huang, Chun-Yang; Hung, Chung-Jung; Tsai, Tsung-Ling; Jieng, Jheng-Hong; Chand, Umesh; Lin, Chun-An; Ahmed, Ejaz; Rana, Anwar Manzoor; Nadeem, Muhammad Younus; Tseng, Tseung-Yuen; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics |
| 1-Jul-2015 | Resistive Switching Characteristics of WO3/ZrO2 Structure With Forming-Free, Self-Compliance, and Submicroampere Current Operation | Tsai, Tsung-Ling; Lin, Yu-Hsuan; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-一月-2015 | Room-temperature fabricated, fully transparent resistive memory based on ITO/CeO2/ITO structure for RRAM applications | Ismail, Muhammad; Rana, Anwar Manzoor; Talib, Ijaz; Tsai, Tsung-Ling; Chand, Umesh; Ahmed, Ejaz; Nadeem, Muhammad Younus; Aziz, Abdul; Shah, Nazar Abbas; Hussain, Muhammad; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 10-二月-2014 | Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large endurance | Huang, Chun-Yang; Huang, Chung-Yu; Tsai, Tsung-Ling; Lin, Chun-An; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 15-Jul-2013 | Unipolar resistive switching behavior in Pt/HfO2/TiN device with inserting ZrO2 layer and its 1 diode-1 resistor characteristics | Lee, Dai-Ying; Tsai, Tsung-Ling; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 28-Jan-2015 | Unipolar resistive switching behaviors and mechanisms in an annealed Ni/ZrO2/TaN memory device | Tsai, Tsung-Ling; Ho, Tsung-Han; Tseng, Tseung-Yuen; 電子物理學系; Department of Electrophysics |
| 2016 | 氧化鋯電阻式記憶體元件之熱相關研究 | 蔡宗霖; 曾俊元; Tsai, Tsung-Ling; 電子研究所 |
