| 公開日期 | 標題 | 作者 |
| 1-七月-2010 | Broadband Quantum-Dot Infrared Photodetector | Lin, Wei-Hsun; Tseng, Chi-Che; Chao, Kuang-Ping; Kung, Shu-Yen; Lin, Shih-Yen; Wu, Meng-Chyi; 光電工程學系; Department of Photonics |
| 1-七月-2008 | Enhanced normal-incident absorption of quantum-dot infrared photodetectors with smaller quantum dots | Tseng, Chi-Che; Chou, Shu-Ting; Chen, Yi-Hao; Chen, Cheng-Nan; Lin, Wei-Hsun; Chung, Tung-Hsun; Lin, Shih-Yen; Chiu, Pei-Chin; Chyi, Jen-Inn; Wu, Meng-Chyi; 光電工程學系; Department of Photonics |
| 1-九月-2009 | Enhancement of operation temperature of InAs/GaAs quantum-dot infrared photodetectors with hydrogen-plasma treatment | Lin, Wei-Hsun; Tseng, Chi-Che; Chao, Kuang-Ping; Lin, Shih-Yen; Wu, Meng-Chyi; 光電工程學系; Department of Photonics |
| 1-三月-2011 | Influence of As on the Morphologies and Optical Characteristics of GaSb/GaAs Quantum Dots | Tseng, Chi-Che; Mai, Shu-Cheng; Lin, Wei-Hsun; Wu, Shung-Yi; Yu, Bang-Ying; Chen, Shu-Han; Lin, Shih-Yen; Shyue, Jing-Jong; Wu, Meng-Chyi; 光電工程學系; Department of Photonics |
| 1-五月-2008 | Influence of As-stabilized surface on the formation of InAs/GaAs quantum dots | Tseng, Chi-Che; Chou, Shu-Ting; Chen, Yi-Hao; Chung, Tung-Hsun; Lin, Shih-Yen; Wu, Meng-Chyi; 光電工程學系; Department of Photonics |
| 2012 | The influence of background As on GaSb/GaAs quantum dots and its application in infrared photodetectors | Lin, Wei-Hsun; Tseng, Chi-Che; Wu, Shung-Yi; Wu, Meng-Hsun; Lin, Shih-Yen; Wu, Meng-Chyi; 光電工程學系; Department of Photonics |
| 1-九月-2009 | The influence of In composition on InGaAs-capped InAs/GaAs quantum-dot infrared photodetectors | Lin, Wei-Hsun; Chao, Kuang-Ping; Tseng, Chi-Che; Mai, Shu-Cheng; Lin, Shih-Yen; Wu, Meng-Chyi; 光電工程學系; Department of Photonics |
| 15-九月-2009 | InGaAs-Capped InAs-GaAs Quantum-Dot Infrared Photodetectors Operating in the Long-Wavelength Infrared Range | Lin, Wei-Hsun; Tseng, Chi-Che; Chao, Kuang-Ping; Mai, Shu-Cheng; Lin, Shih-Yen; Wu, Meng-Chyi; 光電工程學系; Department of Photonics |
| 22-三月-2010 | Room-temperature operation type-II GaSb/GaAs quantum-dot infrared light-emitting diode | Lin, Shih-Yen; Tseng, Chi-Che; Lin, Wei-Hsun; Mai, Shu-Cheng; Wu, Shung-Yi; Chen, Shu-Han; Chyi, Jen-Inn; 光電工程學系; Department of Photonics |
| 1-九月-2008 | Single-Period InAs-GaAs Quantum-Dot Infrared Photodetectors | Chou, Shu-Ting; Lin, Shih-Yen; Tseng, Chi-Che; Chen, Yi-Hao; Chen, Cheng-Nan; Wu, Meng-Chyi; 光電工程學系; Department of Photonics |
| 23-七月-2010 | Site-controlled self-assembled InAs quantum dots grown on GaAs substrates | Lin, Shih-Yen; Tseng, Chi-Che; Chung, Tung-Hsun; Liao, Wen-Hsuan; Chen, Shu-Han; Chyi, Jen-Inn; 光電工程學系; Department of Photonics |
| 1-五月-2010 | Transition mechanism of InAs/GaAs quantum-dot infrared photodetectors with different InAs coverages | Tseng, Chi-Che; Chung, Tung-Hsun; Mai, Shu-Cheng; Chao, Kuang-Ping; Lin, Wei-Hsun; Lin, Shih-Yen; Wu, Meng-Chyi; 光電工程學系; Department of Photonics |
| 1-十一月-2008 | The transition mechanisms of a ten-period InAs/GaAs quantum-dot infrared photodetector | Tseng, Chi-Che; Chou, Shu-Ting; Lin, Shin-Yen; Chen, Cheng-Nan; Lin, Wei-Hsun; Chen, Yi-Hao; Chung, Tung-Hsun; Wu, Meng-Chyi; 光電工程學系; Department of Photonics |
| 15-五月-2011 | The transition mechanisms of type-II GaSb/GaAs quantum-dot infrared light-emitting diodes | Tseng, Chi-Che; Lin, Wei-Hsun; Wu, Shung-Yi; Chen, Shu-Han; Lin, Shih-Yen; 光電工程學系; Department of Photonics |
| 21-九月-2009 | Voltage-tunable two-color quantum-dot infrared photodetectors | Lin, Shih-Yen; Lin, Wei-Hsun; Tseng, Chi-Che; Chao, Kuang-Ping; Mai, Shu-Cheng; 光電工程學系; Department of Photonics |
| 15-二月-2010 | Wavelength-Tunable InGaAs-Capped Quantum-Dot Infrared Photodetectors | Lin, Wei-Hsun; Tseng, Chi-Che; Chao, Kuang-Ping; Mai, Shu-Cheng; Lin, Shih-Yen; Wu, Meng-Chyi; 光電工程學系; Department of Photonics |
| 1-五月-2011 | Wavelength-tunable InGaAs-capped quantum-dot infrared photodetectors for multi-color detection | Lin, Wei-Hsun; Lin, Shih-Yen; Tseng, Chi-Che; Kung, Shu-Yen; Chao, Kuang-Ping; Mai, Shu-Cheng; Wu, Meng-Chyi; 光電工程學系; Department of Photonics |
