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Issue DateTitleAuthor(s)
1-Aug-2002Impact of nitrogen and/or fluorine implantation on deep-submicron Co-salicide processChang, TY; Lei, TF; Chao, TS; Chen, SW; Kao, LM; Chen, SK; Tuan, A; Su, TP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-1999Improvement of ultra-thin 3.3 nm thick oxide for co-salicide process using NF3 annealed poly-gateChang, TY; Lei, TF; Chao, TS; Huang, CT; Chen, SK; Tuan, A; Chou, S; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
13-Apr-2000Low contact resistance of poly-plug structure by in-situ HF-vapour cleaningChen, JH; Lei, TF; Chao, TS; Su, TP; Huang, SJ; Tuan, A; Chen, SK; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
31-Oct-1997Stabilizing dielectric constant of fluorine-doped SiO2 film by N2O and NH3 plasma post-treatmentMei, YJ; Chang, TC; Chang, SJ; Pan, FM; Chen, MSK; Tuan, A; Chou, S; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 4 of 4