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Showing results 1 to 13 of 13
Issue DateTitleAuthor(s)
13-Sep-1993ANOMALOUS DOPING BEHAVIOR OF IN-SITU BORON-DOPED POLYCRYSTALLINE SILICON DEPOSITED BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITIONLIN, HC; LIN, HY; CHANG, CY; LEI, TF; WANG, PJ; DENG, RC; LIN, JD; CHAO, CY; 機械工程學系; 電控工程研究所; Department of Mechanical Engineering; Institute of Electrical and Control Engineering
1-Apr-1994CHARACTERIZATION OF SI/SIGE STRAINED-LAYER SUPERLATTICES GROWN BY AN ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION TECHNIQUECHANG, TC; CHANG, CY; JUNG, TG; TSAI, WC; HUANG, GW; WANG, PJ; 電控工程研究所; Institute of Electrical and Control Engineering
7-Feb-1994DEPOSITION OF IN-SITU BORON-DOPED POLYCRYSTALLINE SILICON FILMS AT REDUCED PRESSURESLIN, HC; LIN, HY; CHANG, CY; LEI, TF; WANG, PJ; DENG, RC; LIN, JD; 電控工程研究所; Institute of Electrical and Control Engineering
1-Aug-1994EFFECT OF BORON DOPING ON THE STRUCTURAL-PROPERTIES OF POLYCRYSTALLINE SILICON FILMS GROWN AT REDUCED PRESSURESLIN, HC; LIN, HY; CHANG, CY; JUNG, TG; WANG, PJ; DENG, RC; LIN, JD; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Oct-1995AN EFFICIENT PRECLEAN OF ALUMINIZED SILICON SUBSTRATE FOR CHEMICAL-VAPOR-DEPOSITION OF SUBMICRON TUNGSTEN PLUGSYEH, WK; TSAI, MH; CHEN, SH; CHEN, MC; WANG, PJ; LIU, LM; LIN, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Oct-1995AN EFFICIENT PRECLEAN OF ALUMINIZED SILICON SUBSTRATE FOR CHEMICAL-VAPOR-DEPOSITION OF SUBMICRON TUNGSTEN PLUGSYEH, WK; TSAI, MH; CHEN, SH; CHEN, MC; WANG, PJ; LIU, LM; LIN, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-1993ENHANCEMENT OF BAND-EDGE LUMINESCENCE IN HYDROGENATED STRAINED SI(0.84)GE(0.16)/SI QUANTUM-WELLS BY PHOTOCHEMICAL VAPOR-DEPOSITIONPAN, SC; CHEN, YF; CHANG, DC; CHANG, CY; WANG, PJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
6-Sep-1993GROWTH OF UNDOPED POLYCRYSTALLINE SI BY AN ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION SYSTEMLIN, HC; LIN, HY; CHANG, CY; LEI, TF; WANG, PJ; CHAO, CY; 機械工程學系; 電控工程研究所; Department of Mechanical Engineering; Institute of Electrical and Control Engineering
1-Jan-1994LOW-TEMPERATURE EPITAXIAL-GROWTH OF SILICON AND SILICON-GERMANIUM ALLOY BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITIONJUNG, TG; CHANG, CY; CHANG, TC; LIN, HC; WANG, T; TSAI, WC; HUANG, GW; WANG, PJ; 電控工程研究所; Institute of Electrical and Control Engineering
1-Apr-1994NANOMETER THICK SI/SIGE STRAINED-LAYER SUPERLATTICES GROWN BY AN ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION TECHNIQUECHANG, TC; CHANG, CY; JUNG, TG; TSAI, WC; WANG, PJ; LEE, TL; CHEN, LJ; 電控工程研究所; 奈米中心; Institute of Electrical and Control Engineering; Nano Facility Center
24-May-1993OBSERVATION OF QUANTUM CONFINEMENT EFFECTS IN STRAINED SI0.84GE0.16/SI QUANTUM-WELLS AT ROOM-TEMPERATURECHEN, YF; DAI, YT; CHOU, HP; CHANG, DC; CHANG, CY; WANG, PJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-1994QUANTUM CONFINEMENT EFFECTS OF SI/SIGE STRAINED-LAYER SUPERLATTICES GROWN BY AN ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION TECHNIQUECHANG, TC; CHANG, CY; JUNG, TG; CHEN, PA; TSAI, WC; WANG, PJ; CHEN, YF; PAN, SC; 電控工程研究所; Institute of Electrical and Control Engineering
1-May-1994SUPERIOR DAMAGE-IMMUNITY OF THIN OXIDES THERMALLY GROWN ON REACTIVE-ION-ETCHED SILICON SURFACE IN N2O AMBIENTUENG, SY; CHAO, TS; WANG, PJ; CHEN, WH; CHANG, DC; CHENG, HC; 奈米中心; Nano Facility Center
Showing results 1 to 13 of 13