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Showing results 1 to 17 of 17
Issue DateTitleAuthor(s)
1-Nov-1991ANALYSIS OF STATISTICAL VOICE PACKET MULTIPLEXER WITH DNA MODELCHANG, CJ; WANG, YH; 交大名義發表; 電信工程研究所; National Chiao Tung University; Institute of Communications Engineering
20-Aug-1990CHARACTERIZATION OF A GAAS CURRENT-CONTROLLED BIPOLAR-UNIPOLAR TRANSITION NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTORYARN, KF; WANG, YH; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering
1-May-1990CURRENT-INJECTION 3-TERMINAL GAAS REGENERATIVE SWITCHESWANG, YH; YARN, KF; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering
15-Mar-1992EFFECTS OF SB4/GA RATIOS ON THE ELECTRICAL-PROPERTIES OF GASB SCHOTTKY DIODESWANG, YH; HOUNG, MP; SZE, PW; CHEN, JF; CHO, AY; 電子物理學系; Department of Electrophysics
1-Mar-1994GAAS BIDIRECTIONAL BISTABILITY SWITCH USING DOUBLE TRIANGULAR BARRIER STRUCTURESYARN, KF; WANG, YH; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering
1-Sep-1989GEOMETRY-EFFECTS ON THE GAAS BIPOLAR UNIPOLAR NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTORYARN, KF; WANG, YH; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering
1-May-1990INVESTIGATION OF 3-TERMINAL VOLTAGE-CONTROLLED SWITCHING DEVICES PREPARED BY MOLECULAR-BEAM EPITAXYWANG, YH; YARN, KF; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering
1-Oct-1994INVESTIGATION OF NEGATIVE DIFFERENTIAL RESISTANCE PHENOMENA IN GASB/ALSB/INAS/GASB/ALSB/INAS STRUCTURESWANG, YH; LIU, MH; HOUNG, MP; CHEN, JF; CHO, AY; 電子物理學系; Department of Electrophysics
1-Dec-1990MOLECULAR-BEAM EPITAXY GROWN GAAS BIPOLAR-UNIPOLAR TRANSITION NEGATIVE DIFFERENTIAL RESISTANCE POWER TRANSISTORYARN, KF; CHANG, CY; WANG, YH; WANG, RL; 電控工程研究所; Institute of Electrical and Control Engineering
20-Dec-1989A NOVEL 3-TERMINAL VOLTAGE-CONTROLLED SWITCHING DEVICE PREPARED BY MOLECULAR-BEAM EPITAXYWANG, YH; YARN, KF; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering
1-Nov-1994A NOVEL DIAC-LIKE SWITCH USING DOUBLE TRIANGULAR BARRIERSYARN, KF; WANG, YH; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering
1-Jun-1990A NOVEL GAAS CURRENT-CONTROLLED BIPOLAR UNIPOLAR TRANSITION NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR PREPARED BY MOLECULAR-BEAM EPITAXYYARN, KF; WANG, YH; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering
20-Mar-1989NOVEL GAAS VOLTAGE-CONTROLLABLE NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR PREPARED BY MOLECULAR-BEAM EPITAXYYARN, KF; WANG, YH; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering
1-Jul-1989ORIGIN OF THE ENHANCEMENT OF NEGATIVE DIFFERENTIAL RESISTANCE AT LOW-TEMPERATURES IN DOUBLE-BARRIER RESONANT TUNNELING STRUCTURESWU, JS; CHANG, CY; LEE, CP; WANG, YH; KAI, F; 電控工程研究所; Institute of Electrical and Control Engineering
1-Jun-1990ROOM-TEMPERATURE OPERATION OF A NOVEL NEGATIVE DIFFERENTIAL RESISTANCE DEVICE PREPARED BY MOLECULAR-BEAM EPITAXYYARN, KF; WANG, YH; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering
1-Feb-1990A TRISTATE SWITCH USING TRIANGULAR BARRIERSWANG, YH; YARN, KF; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering
1-Jun-1990VOLTAGE-CONTROLLED 3 TERMINAL GAAS NEGATIVE DIFFERENTIAL RESISTANCE DEVICE USING N+-I-P+-I-N+ STRUCTUREYARN, KF; WANG, YH; CHANG, CY; CHANG, CS; 電控工程研究所; Institute of Electrical and Control Engineering
Showing results 1 to 17 of 17