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Showing results 1 to 16 of 16
Issue DateTitleAuthor(s)
1-Oct-1993CHARACTERISTICS OF POLYSILICON CONTACTED SHALLOW JUNCTION DIODE FORMED WITH A STACKED-AMORPHOUS-SILICON FILMWU, SL; LEE, CL; LEI, TF; CHANG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-Aug-1992CHARACTERIZATION OF ULTRATHIN OXIDE PREPARED BY LOW-TEMPERATURE WAFER LOADING AND NITROGEN PREANNEALING BEFORE OXIDATIONWU, SL; LEE, CL; LEI, TF; LIANG, MS; 電子工程學系及電子研究所; 電控工程研究所; Department of Electronics Engineering and Institute of Electronics; Institute of Electrical and Control Engineering
5-Jul-1993ELECTRICAL CHARACTERISTICS OF A STACKED NITRIDE MICROCRYSTALLINE-SILICON OXIDE SILICON STRUCTUREWU, SL; LEE, CL; LEI, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-1993ELECTRICAL CHARACTERISTICS OF TEXTURED POLYSILICON OXIDE PREPARED BY A LOW-TEMPERATURE WAFER LOADING AND N-2 PREANNEALING PROCESSWU, SL; LIN, TY; LEE, CL; LEI, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-1994ENHANCEMENT OF OXIDE BREAK-UP BY IMPLANTATION OF FLUORINE IN POLY-SI EMITTER CONTACTED P-+-N SHALLOW JUNCTION FORMATIONWU, SL; LEE, CL; LEI, TF; CHEN, CF; CHEN, LJ; HO, KZ; LING, YC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-1992HIGH-PERFORMANCE POLYSILICON CONTACTED SHALLOW JUNCTIONS FORMED BY STACKED-AMORPHOUS-SILICON FILMSWU, SL; LEE, CL; LEI, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-1995IMPLEMENTATION OF DAMPED RESOLVED ACCELERATION CONTROL FOR A MANIPULATOR NEAR SINGULARITYLIN, SK; WU, SL; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering
1-Aug-1995IMPLEMENTATION OF DAMPED RESOLVED ACCELERATION CONTROL FOR A MANIPULATOR NEAR SINGULARITYLIN, SK; WU, SL; 電控工程研究所; Institute of Electrical and Control Engineering
29-Oct-1990IMPROVEMENT OF ELECTRICAL CHARACTERISTICS OF POLYCRYSTALLINE SILICON-CONTACTED DIODES AFTER FORWARD BIAS STRESSINGWU, SL; LEE, CL; LEI, TF; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering
12-Mar-1990IMPROVEMENT ON THE CURRENT-VOLTAGE CHARACTERISTICS OF POLYCRYSTALLINE SILICON CONTACTED N+-P JUNCTIONS WITH HIGH-FIELD STRESSINGWU, SL; LEE, CL; LEI, TF; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering
1-Aug-1992INVESTIGATION ON THE INTERFACE OF THE POLYCRYSTALLINE SILICON CONTACTED DIODE FORMED WITH A STACKED AMORPHOUS-SILICON FILMWU, SL; LEE, CL; LEI, TF; LEE, TL; CHEN, LJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-1994SUPPRESSION OF THE BORON PENETRATION INDUCED SI/SIO2 INTERFACE DEGRADATION BY USING A STACKED-AMORPHOUS-SILICON FILM AS THE GATE STRUCTURE FOR PMOSFETWU, SL; LEE, CL; LEI, TF; CHEN, JF; CHEN, LJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-1994SYNTHESIS AND X-RAY-DIFFRACTION OF FERROELECTRIC LIQUID-CRYSTALLINE POLYSILOXANES CONTAINING 4'-(2-CHLORO-3-METHYL-PENTANOYLOXY)-4-ALKANYLOXYBIPHENYL SIDE-GROUPSHSIUE, GH; HSIEH, PJ; WU, SL; HSU, CS; 應用化學系; Department of Applied Chemistry
1-Dec-1993THIN OXIDE GROWN ON HEAVILY CHANNEL-IMPLANTED SUBSTRATE BY USING A LOW-TEMPERATURE WAFER LOADING AND N2 PRE-ANNEALING PROCESSWU, SL; LEE, CL; LEI, TF; 電子工程學系及電子研究所; 電控工程研究所; Department of Electronics Engineering and Institute of Electronics; Institute of Electrical and Control Engineering
1-Aug-1993TUNNEL OXIDE PREPARED BY THERMAL-OXIDATION OF THIN POLYSILICON FILM ON SILICON (TOPS)WU, SL; LEE, CL; LEI, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
28-Jun-1993ULTRATHIN TEXTURED POLYCRYSTALLINE OXIDE WITH A HIGH ELECTRON CONDUCTION EFFICIENCY PREPARED BY THERMAL-OXIDATION OF THIN POLYCRYSTALLINE SILICON FILM ON N+ POLYCRYSTALLINE SILICONWU, SL; LEE, CL; LEI, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 16 of 16