瀏覽 的方式： 作者 Wang, HCH
顯示 1 到 8 筆資料，總共 8 筆
| 公開日期 | 標題 | 作者 |
| 1-一月-2002 | Arsenic/phosphorus LDD optimization by taking advantage of phosphorus transient enhanced diffusion for high voltage input/output CMOS devices | Wang, HCH; Wang, CC; Diaz, CH; Liew, BK; Sun, JYC; Wang, TH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-六月-2005 | Continuous and precise work function adjustment for integratable dual metal gate CMOS technology using Hf-Mo binary alloys | Li, TL; Hu, CH; Ho, WL; Wang, HCH; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-十二月-2000 | Hot carrier reliability improvement by utilizing phosphorus transient enhanced diffusion for input/output devices of deep submicron CMOS technology | Wang, HCH; Diaz, CH; Liew, BK; Sun, JYC; Wang, TH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-二月-2001 | Interface induced uphill diffusion of boron: An effective approach for ultrashallow junction | Wang, HCH; Wang, CC; Chang, CS; Wang, TH; Griffin, PB; Diaz, CH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-六月-2006 | Novel dual-metal gate technology using Mo-MoSix combination | Li, TL; Ho, WL; Chen, HB; Wang, HCH; Chang, CY; Hu, CM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-五月-2006 | A novel transient characterization technique to investigate trap properties in HfSiON gate dielectric MOSFETs - From single electron emission to PBTI recovery transient | Wang, TH; Chan, CT; Tang, CJ; Tsai, CW; Wang, HCH; Chi, MH; Tang, DD; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 2005 | Positive bias and temperature stress induced two-stage drain current degradation in HfSiON nMOSFET's | Chan, CT; Tang, CJ; Wang, T; Wang, HCH; Tang, DD; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 2005 | Single-electron emission of traps in HfSiON as high-k gate dielectric for MOSFETs | Chan, CT; Tang, CJ; Kuo, CH; Ma, HC; Tsai, CW; Wang, HCH; Chi, MH; Wang, T; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
