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Issue DateTitleAuthor(s)
2000Auger recombination enhanced hot carrier degradation in nMOSFETs with positive substrate biasChiang, LP; Tsai, CW; Wang, T; Liu, UC; Wang, MC; Hsia, LC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-1999Deuterium effect on stress-induced leakage currentLin, BC; Cheng, YC; Chin, A; Wang, T; Tsai, C; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004Hot carrier degradation in LDMOS power transistorsCheng, CC; Wu, JW; Lee, CC; Shao, JH; Wang, T; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Low frequency noise degradation in ultra-thin oxide (I5A) analog n-MOSFETs resulting from valence-band tunnelingWu, JW; You, JW; Ma, HC; Cheng, CC; Hsu, C; Huang, GW; Chang, CS; Wang, T; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Low voltage high speed SiO(2)/AlGaN/AlLaO(3)/TaN memory with good retentionChin, A; Laio, CC; Chen, C; Chiang, KC; Yu, DS; Yoo, WJ; Samudra, GS; Wang, T; Hsieh, IJ; McAlister, SP; Chi, CC; 電機學院; College of Electrical and Computer Engineering
2005Positive bias and temperature stress induced two-stage drain current degradation in HfSiON nMOSFET'sChan, CT; Tang, CJ; Wang, T; Wang, HCH; Tang, DD; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2002Process and doping species dependence of negative-bias-temperature instability for p-channel MOSFETsLee, DY; Lin, HC; Chiang, WJ; Lu, WT; Huang, GW; Huang, TY; Wang, T; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Single-electron emission of traps in HfSiON as high-k gate dielectric for MOSFETsChan, CT; Tang, CJ; Kuo, CH; Ma, HC; Tsai, CW; Wang, HCH; Chi, MH; Wang, T; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2003Substrate bias dependence of breakdown progression in ultrathin oxide pMOSFETsTsai, CW; Chen, MC; Gu, SH; Wang, T; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
22-Nov-2004Valence-band tunneling induced low frequency noise in ultrathin oxide (15 angstrom) n-type metal-oxide-semiconductor field effect transistorsWu, JW; You, JW; Ma, HC; Cheng, CC; Chang, CS; Huang, GW; Wang, T; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 10 of 10