| Issue Date | Title | Author(s) |
| 15-May-2001 | Activation of p-type GaN in a pure oxygen ambient | Wen, TC; Lee, SC; Lee, WI; Chen, TY; Chan, SH; Tsang, JS; 電子物理學系; 友訊交大聯合研發中心; Department of Electrophysics; D Link NCTU Joint Res Ctr |
| 2000 | Characteristics of optical properties of the interrupt growth method on InGaN/GaN MQW structures | Lin, CF; Shu, CK; Lee, WH; Wen, TC; Chu, CF; Fang, JY; Chen, WK; Lee, WI; Wang, SC; 光電工程學系; Department of Photonics |
| 1-Mar-2001 | Characterization of p-type InxGa1-xN grown by metalorganic chemical vapor deposition | Wen, TC; Lee, WI; Sheu, JK; Chi, GC; 友訊交大聯合研發中心; D Link NCTU Joint Res Ctr |
| 1-Aug-1999 | A dopant-related defect in Te-doped AlInP | Wu, YR; Sung, WJ; Wen, TC; Lee, SC; Lee, WI; 電子物理學系; 友訊交大聯合研發中心; Department of Electrophysics; D Link NCTU Joint Res Ctr |
| 1-Sep-2001 | Influence of barrier growth temperature on the properties of InGaN/GaN quantum Well | Wen, TC; Lee, WI; 電子物理學系; 友訊交大聯合研發中心; Department of Electrophysics; D Link NCTU Joint Res Ctr |
| 2001 | Influence of barrier growth temperature on the properties of InGaN/GaN quantum wells | Wen, TC; Lee, SC; Lee, WI; 友訊交大聯合研發中心; D Link NCTU Joint Res Ctr |
| 29-四月-2003 | Liquid phase deposited SiO2 on GaN | Wu, HR; Lee, KW; Nian, TB; Chou, DW; Wu, JJH; Wang, YH; Houng, MP; Sze, PW; Su, YK; Chang, SJ; Ho, CH; Chiang, CI; Chern, YT; Juang, FS; Wen, TC; Lee, WI; Chyi, JI; 電子物理學系; Department of Electrophysics |
| 1-四月-2002 | Observation of dislocation etch pits in epitaxial lateral overgrowth GaN by wet etching | Wen, TC; Lee, WI; Sheu, JK; Chi, GC; 電子物理學系; 資訊工程學系; Department of Electrophysics; Department of Computer Science |
| 15-六月-2000 | Phosphorus vacancy as a deep level in AlInP layers | Sung, WJ; Wu, YR; Lee, SC; Wen, TC; Li, TJ; Chang, JT; Lee, WI; 友訊交大聯合研發中心; D Link NCTU Joint Res Ctr |
| 1999 | Study of a common deep level in GaN | Wen, TC; Lee, SC; Lee, WI; Guo, JD; Feng, MS; 電子物理學系; Department of Electrophysics |
