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Issue DateTitleAuthor(s)
Nov-2016AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave ApplicationsLin, Yen-Ku; Noda, Shuichi; Lo, Hsiao-Chieh; Liu, Shih-Chien; Wu, Chia-Hsun; Wong, Yuen-Yee; Luc, Quang Ho; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
Jan-2017AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications (vol 37, pg 1395, 2016)Lin, Yen-Ku; Noda, Shuichi; Lo, Hsiao-Chieh; Liu, Shih-Chien; Wu, Chia-Hsun; Wong, Yuen-Yee; Luc, Quang Ho; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
Jan-2017AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications (vol 37, pg 1395, 2016)Lin, Yen-Ku; Noda, Shuichi; Lo, Hsiao-Chieh; Liu, Shih-Chien; Wu, Chia-Hsun; Wong, Yuen-Yee; Luc, Quang Ho; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-Feb-2013Characterization of AlInN Layer Grown on GaN/Sapphire Substrate by MOCVDHuang, Wei-Ching; Chang, Edward-Yi; Wong, Yuen-Yee; Lin, Kung-Liang; Hsiao, Yu-Lin; Dee, Chang Fu; Majlis, Burhanuddin Yeop; 材料科學與工程學系; Department of Materials Science and Engineering
8-Jan-2016Demonstrating 1 nm-oxide-equivalent-thickness La2O3 and HfO2 multi-layer composite oxides on In0.53Ga0.47As MOS capacitorWu, Wen-Hao; Lin, Yueh-Chin; Hou, Tzu-Ching; Lin, Tai-Wei; Hsu, Hisang-Hua; Wong, Yuen-Yee; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 影像與生醫光電研究所; Department of Materials Science and Engineering; Institute of Photonic System; Institute of Imaging and Biomedical Photonics
2008Dependence of GaN Defect Structure on the Growth Temperature of the AlN Buffer LayerWong, Yuen-Yee; Chang, Edward Yi; Yang, Tsung-Hsi; Chang, Jet-Rung; Chen, Yi-Cheng; Ku, Jui-Tai; 交大名義發表; National Chiao Tung University
1-Sep-2014Direct growth of a 40 nm InAs thin film on a GaAs/Ge heterostructure by metalorganic chemical vapor depositionYu, Hung-Wei; Wang, Tsun-Ming; Nguyen, Hong-Quan; Wong, Yuen-Yee; Tu, Yung-Yi; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
29-Jul-2011Dislocation reduction in GaN film using Ga-lean GaN buffer layer and migration enhanced epitaxyWong, Yuen-Yee; Chang, Edward Yi; Wu, Yue-Han; Hudait, Mantu K.; Yang, Tsung-Hsi; Chang, Jet-Rung; Ku, Jui-Tai; Chou, Wu-Ching; Chen, Chiang-Yao; Maa, Jer-Shen; Lin, Yueh-Chin; 材料科學與工程學系; 光電學院; 電子工程學系及電子研究所; Department of Materials Science and Engineering; College of Photonics; Department of Electronics Engineering and Institute of Electronics
1-Mar-2009The effect of AlN buffer growth parameters on the defect structure of GaN grown on sapphire by plasma-assisted molecular beam epitaxyWong, Yuen-Yee; Chang, Edward Yi; Yang, Tsung-Hsi; Chang, Jet-Rung; Chen, Yi-Cheng; Ku, Jui-Tai; Lee, Ching-Ting; Chang, Chun-Wei; 材料科學與工程學系; 電子工程學系及電子研究所; 友訊交大聯合研發中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; D Link NCTU Joint Res Ctr
1-Aug-2012Effect of Nitridation on the Regrowth Interface of AlGaN/GaN Structures Grown by Molecular Beam Epitaxy on GaN TemplatesWong, Yuen-Yee; Huang, Wei-Ching; Trinh, Hai-Dang; Yang, Tsung-Hsi; Chang, Jet-Rung; Chen, Micheal; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-Feb-2012Effect of Postdeposition Annealing Temperatures on Electrical Characteristics of Molecular-Beam-Deposited HfO2 on n-InAs/InGaAs Metal-Oxide-Semiconductor CapacitorsTrinh, Hai-Dang; Lin, Yueh-Chin; Wang, Huan-Chung; Chang, Chia-Hua; Kakushima, Kuniyuki; Iwai, Hiroshi; Kawanago, Takamasa; Lin, Yan-Gu; Chen, Chi-Ming; Wong, Yuen-Yee; Huang, Guan-Ning; Hudait, Mantu; Chang, Edward Yi; 材料科學與工程學系; Department of Materials Science and Engineering
Feb-2016The Effect of the Thickness of the Low Temperature AlN Nucleation Layer on the Material Properties of GaN Grown on a Double-Step AlN Buffer Layer by the MOCVD MethodHuang, Wei-Ching; Chu, Chung-Ming; Hsieh, Chi-Feng; Wong, Yuen-Yee; Chen, Kai-Wei; Lee, Wei-I; Tu, Yung-Yi; Chang, Edward-Yi; Dee, Chang Fu; Majlis, B. Y.; Yap, S. L.; 材料科學與工程學系; 電機學院; Department of Materials Science and Engineering; College of Electrical and Computer Engineering
1-May-2010Effects of Al(x)Ga(1-x)N interlayer for GaN epilayer grown on Si substrate by metal-organic chemical-vapor depositionLin, Kung-Liang; Chang, Edward-Yi; Hsiao, Yu-Lin; Huang, Wei-Ching; Luong, Tien-Tung; Wong, Yuen-Yee; Li, Tingkai; Tweet, Doug; Chiang, Chen-Hao; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
1-Jan-2014The effects of Growth Parameters on the Electrical Properties in InAlN/AlN/GaN High-Electron-Mobility Transistors (HEMTs)Huang, Wei-Ching; Wong, Yuen-Yee; Liu, Kuan-Shin; Hsieh, Chi-Feng; Chang, Edward Yi; 材料科學與工程學系; Department of Materials Science and Engineering
1-Sep-2014Effects of initial GaN growth mode on the material and electrical properties of AlGaN/GaN high-electron-mobility transistorsWong, Yuen-Yee; Chang, Edward Yi; Huang, Wei-Ching; Lin, Yueh-Chin; Tu, Yung-Yi; Chen, Kai-Wei; Yu, Hung-Wei; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-Oct-2017Effects of NH3 Flow Rate During AlGaN Barrier Layer Growth on the Material Properties of AlGaN/GaN HEMT HeterostructureLumbantoruan, Franky J.; Wong, Yuen-Yee; Huang, Wei-Ching; Yu, Hung-Wei; Chang, Edward-Yi; 材料科學與工程學系; 國際半導體學院; Department of Materials Science and Engineering; International College of Semiconductor Technology
1-Nov-2010Effects of Wet Chemical and Trimethyl Aluminum Treatments on the Interface Properties in Atomic Layer Deposition of Al(2)O(3) on InAsTrinh, Hai-Dang; Chang, Edward Yi; Wong, Yuen-Yee; Yu, Chih-Chieh; Chang, Chia-Yuan; Lin, Yueh-Chin; Nguyen, Hong-Quan; Tran, Binh-Tinh; 材料科學與工程學系; Department of Materials Science and Engineering
1-Nov-2010Effects of Wet Chemical and Trimethyl Aluminum Treatments on the Interface Properties in Atomic Layer Deposition of Al2O3 on InAsTrinh, Hai-Dang; Chang, Edward Yi; Wong, Yuen-Yee; Yu, Chih-Chieh; Chang, Chia-Yuan; Lin, Yueh-Chin; Nguyen, Hong-Quan; Tran, Binh-Tinh; 材料科學與工程學系; Department of Materials Science and Engineering
2010Epitaxial Overgrowth of Gallium Nitride Nano-Rods on Silicon (111) Substrates by RF-Plasma-Assisted Molecular Beam EpitaxyKu, Jui-Tai; Yang, Tsung-Hsi; Chang, Jet-Rung; Wong, Yuen-Yee; Chou, Wu-Ching; Chang, Chun-Yen; Chen, Chiang-Yao; 材料科學與工程學系; 電子物理學系; 友訊交大聯合研發中心; Department of Materials Science and Engineering; Department of Electrophysics; D Link NCTU Joint Res Ctr
1-Jan-2012Growth and Fabrication of AlGaN/GaN HEMT on SiC SubstrateWong, Yuen-Yee; Chiu, Yu-Sheng; Luong, Tien-Tung; Lin, Tai-Ming; Ho, Yen-Teng; Lin, Yue-Chin; Chang, Edward Yi; 材料科學與工程學系; Department of Materials Science and Engineering
Showing results 1 to 20 of 41  next >