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Issue DateTitleAuthor(s)
1995Accurate MOS device hot carrier models for VLSI reliability simulationCHUNG, SS; YANG, JJ; SU, JS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-1995A NEW APPROACH TO MODELING THE SUBSTRATE CURRENT OF PRESTRESSED AND POST-STRESSED MOSFETSYANG, JJ; SHAOSHIUN, S; CHOU, PC; CHEN, CH; LIN, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-1993A UNIFIED 3-D MOBILITY MODEL FOR THE SIMULATION OF SUBMICRON MOS DEVICESYANG, JJ; CHUNG, SSS; CHANG, CH; LEE, GH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 3 of 3